High-power, high-brightness 100 W QCW diode laser at 940 nm
C. Fiebig , G. Erbert, W. Pittroff, H. Wenzel, A. Maaßdorf, S. Einfeldt, and G. Tränkle
Published in:
Proc. SPIE, vol. 6456, no. 64560K (2007).
Abstract:
We demonstrate 940 nm diode lasers with more than 100 W QCW output power having an aperture width 5 to 10 times smaller than commonly used 10 mm bars. We used a super-large vertical waveguide structure to reduce the facet load. The waveguide design results in a very small vertical divergence of only 14° FWHM (24° including 95% of power). The threshold current of a device with 1 mm wide aperture is about 8 A and the slope efficiency is above 70%. The lateral far field width is below 10°, including 95% of power, and the wall plug efficiency is around 50% at 100 W output power.
b Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Keywords:
diode lasers, quasi-CW, high-power, high-brightness, InGaAs/AlGaAs
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