200 kHz linewidth of 780 nm high-power distributed feedback diode laser
T.-P. Nguyen, A. Klehr, O. Brox, G. Erbert, and G. Tränkle
Published in:
European Conf. on Lasers and Electro-Optics and Int. Quantum Electronics Conf. (CLEO Europe - IQEC 2007), Munich, Germany, Jun. 17-22, paper CB-6-WED (2007).
Abstract:
Narrow-linewidth semiconductor lasers emitting in the wavelength range between 760 and 790 nm are attractive for applications such as state selection in rubidium atomic clocks, Doppler laser cooling, nonlinear frequency conversion, Raman and absorption spectroscopy. These applications require a stable lasing frequency together with a high output power. Distributed feedback (DFB) diode lasers with high power and narrow linewidth can satisfy these requirements.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
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