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Absolute frequency measurement of rubidium 5S-6P transitions
/forschung/publikationen/absolute-frequency-measurement-of-rubidium-5s-6p-transitions
We report on measurements of the 5S-6P rubidium transition frequencies for rubidium isotopes with an absolute uncertainty of ≤ 20 kHz for the 5S → 6P3/2 transition and…
High-brightness broad-area diode lasers with enhanced self-aligned lateral structure
/forschung/publikationen/high-brightness-broad-area-diode-lasers-with-enhanced-self-aligned-lateral-structure
Broad-area diode lasers with increased brightness and efficiency are presented, which are fabricated using an enhanced self-aligned lateral structure by means of a two-step epitaxial growth process…
Dispersion effects in on-state resistance of lateral Ga2O3 MOSFETs at 300 V switching
/forschung/publikationen/dispersion-effects-in-on-state-resistance-of-lateral-ga2o3-mosfets-at-300nbspv-switching
Static characterisation and fast switching processes of lateral β-Ga2O3 metal oxide semiconductor field-effect transistors (MOSFETs) are presented. The investigated transistors with 10 mm…
Dynamics in high-power diode lasers
/forschung/publikationen/dynamics-in-high-power-diode-lasers
Dynamics in high-power diode lasers U. Bandelowa, M. Radziunasa, A. Zeghuzib, H.-J. Wünscheb, and H. Wenzelb a Weierstrass Institute (WIAS), 10117 Berlin,…
Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence
/forschung/publikationen/optimization-of-the-epitaxial-growth-of-undoped-gan-waveguides-in-gan-based-laser-diodes-evaluated-by-photoluminescence
Non-intentionally doped c-plane GaN layers are generally employed as p-side waveguide layers in violet/blue-emitting laser diodes. The recombination and diffusion of charge carriers in the p-side GaN…
Advances in electron channelling contrast imaging and electron backscatter diffraction for imaging and analysis of structural defects in the scanning electron microscope
/forschung/publikationen/advances-in-electron-channelling-contrast-imaging-and-electron-backscatter-diffraction-for-imaging-and-analysis-of-structural-defects-in-the-scanning-electron-microscope
In this article we describe the scanning electron microscopy (SEM) techniques of electron channelling contrast imaging and electron backscatter diffraction. These techniques provide information on…
Low resistance n-contact for UVC LEDs by a two-step plasma etching process
/forschung/publikationen/low-resistance-n-contact-for-uvc-leds-by-a-two-step-plasma-etching-process
The impact of plasma etching on the formation of low-resistance n-contacts on the AlGaN:Si current spreading layer during the chip fabrication of ultraviolet light-emitting diodes (UV LEDs) emitting…
Two-photon polymerization with diode lasers emitting ultrashort pulses with high repetition rate
/forschung/publikationen/two-photon-polymerization-with-diode-lasers-emitting-ultrashort-pulses-with-high-repetition-rate
In this Letter, we investigate the resolution of two-photon polymerization (2PP) with an amplified mode-locked external cavity diode laser with adjustable pulse length and a high repetition rate. The…
Travelling-Wave Analysis of Extended Cavity Diode Lasers
/forschung/publikationen/travelling-wave-analysis-of-extended-cavity-diode-lasers
We report results of numerical simulations of the dynamic properties of single-transverse mode diode lasers subject to an external optical feedback provided by a volume holographic Bragg grating. We…
Impact of High-Temperature Annealing on Boron Containing AlN Layers Grown by Metal Organic Vapor Phase Epitaxy
/forschung/publikationen/impact-of-high-temperature-annealing-on-boron-containing-aln-layers-grown-by-metal-organic-vapor-phase-epitaxy
Herein, the impact of high-temperature (HT) annealing on the crystalline structure of metal organic vapor phase epitaxy (MOVPE)-grown boron-containing AlN layers is investigated. High-resolution…