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Reliable high-spectral-radiance 635 nm tapered diode lasers with monolithically integrated distributed Bragg reflector
/forschung/publikationen/reliable-high-spectral-radiance-635-nm-tapered-diode-lasers-with-monolithically-integrated-distributed-bragg-reflector
Reliable high-spectral-radiance 635 nm tapered diode lasers with monolithically integrated distributed Bragg reflector K. Paschke, G. Blume, J. Pohl, D. Feise, P. Ressel,…
High-power, high-beam quality miniaturized laser module for pumping of solid state lasers at 980 nm
/forschung/publikationen/high-power-high-beam-quality-miniaturized-laser-module-for-pumping-of-solid-state-lasers-at-980-nm
High-power, high-beam quality miniaturized laser module for pumping of solid state lasers at 980 nm P. Hildenstein1, A. Sahm1, D. Feise1, M. Gorjan2, S. Tacchini3,…
Wavelength stabilized high pulse power laser bars for line-flash automotive LIDAR
/forschung/publikationen/wavelength-stabilized-high-pulse-power-laser-bars-for-line-flash-automotive-lidar
Wavelength stabilized high pulse power laser bars for line-flash automotive LIDAR A. Kniggea, H. Christophera, A. Lieroa, J. Frickea, A. Klehra, T. Honigb,…
Design progress for higher efficiency and brightness in 1 kW diode-laser bars
/forschung/publikationen/design-progress-for-higher-efficiency-and-brightness-in-1-kw-diode-laser-bars
Design progress for higher efficiency and brightness in 1 kW diode-laser bars M.M. Karow, D. Martin, P. Della Casa, G. Erbert, and P. Crump Ferdinand-Braun-Institut,…
Efficient, high power 780 nm pumps for high energy class mid-infrared solid state lasers
/forschung/publikationen/efficient-high-power-780-nm-pumps-for-high-energy-class-mid-infrared-solid-state-lasers
Efficient, high power 780 nm pumps for high energy class mid-infrared solid state lasers P. Crump, M. Wilkens, M. Hübner, S. Arslan, M. Niemeyer, P.S. Basler,…
Improving Raman spectroscopy using diode lasers at 785 nm for shifted excitation Raman difference spectroscopy
/forschung/publikationen/improving-raman-spectroscopy-using-diode-lasers-at-785-nm-for-shifted-excitation-raman-difference-spectroscopy
Improving Raman spectroscopy using diode lasers at 785 nm for shifted excitation Raman difference spectroscopy M. Maiwald, B. Sumpf Ferdinand-Braun-Institut, Leibniz-Institut für…
A diode laser based clinical diagnostic system using shifted excitation resonance Raman difference spectroscopy for the in vivo detection of β-carotene in human skin
/forschung/publikationen/a-diode-laser-based-clinical-diagnostic-system-using-shifted-excitation-resonance-raman-difference-spectroscopy-for-the-in-vivo-detection-of-beta-carotene-in-human-skin
A diode laser based clinical diagnostic system using shifted excitation resonance Raman difference spectroscopy for the in vivo detection of β-carotene in human skin B. Sumpf1,…
Charge-shifting optical lock-in detection with shifted excitation Raman difference spectroscopy for the analysis of fluorescent heterogeneous samples
/forschung/publikationen/charge-shifting-optical-lock-in-detection-with-shifted-excitation-raman-difference-spectroscopy-for-the-analysis-of-fluorescent-heterogeneous-samples
Charge-shifting optical lock-in detection with shifted excitation Raman difference spectroscopy for the analysis of fluorescent heterogeneous samples K. Sowoidnicha, M. Maiwalda,…
Strongly coupled, high-quality plasmonic dimer antennas fabricated using a sketch-and-peel technique
/forschung/publikationen/strongly-coupled-high-quality-plasmonic-dimer-antennas-fabricated-using-a-sketch-and-peel-technique
A combination of helium- and gallium-ion beam milling together with a fast and reliable sketch-and-peel technique is used to fabricate gold nanorod dimer antennas with an excellent quality factor and…
Improving AlN Crystal Quality and Strain Management on Nanopatterned Sapphire Substrates by High-Temperature Annealing for UVC Light-Emitting Diodes
/forschung/publikationen/improving-aln-crystal-quality-and-strain-management-on-nanopatterned-sapphire-substrates-by-high-temperature-annealing-for-uvc-light-emitting-diodes
Herein, AlN growth by metalorganic vapor-phase epitaxy on hole-type nanopatterned sapphire substrates is investigated. Cracking occurs for an unexpectedly thin-layer thickness, which is associated to…