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Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices
/forschung/publikationen/challenges-to-overcome-breakdown-limitations-in-lateral-beta-ga2o3-mosfet-devices
In this work, the fabrication of high-performance metal-oxide-semiconductor field-effect transistors (MOSFETs) on Si-doped homoepitaxial layers on (100) Mg-doped semi-insulating β-Ga2O3…
Wide Field Spectral Imaging with Shifted Excitation Raman Difference Spectroscopy Using the Nod and Shuffle Technique
/forschung/publikationen/wide-field-spectral-imaging-with-shifted-excitation-raman-difference-spectroscopy-using-the-nod-and-shuffle-technique
Wide field Raman imaging using the integral field spectroscopy approach was used as a fast, one shot imaging method for the simultaneous collection of all spectra composing a Raman image. For the…
Mode competition in broad-ridge-waveguide lasers
/forschung/publikationen/mode-competition-in-broad-ridge-waveguide-lasers
The lateral brightness achievable with high-power GaAs-based laser diodes having long and broad waveguides is commonly regarded to be limited by the onset of higher-order lateral modes. For the study…
Material interfaces as performance-limiting factors in high power GaAs-based diode lasers
/forschung/publikationen/material-interfaces-as-performance-limiting-factors-in-high-power-gaas-based-diode-lasers
We review recent studies into internal and external material interface effects in GaAs-based broad-area diode-lasers, where these limit power and efficiency. The finite capture time for carriers into…
High-temperature annealing of AlN films grown on 4H-SiC
/forschung/publikationen/high-temperature-annealing-of-aln-films-grown-on-4h-sic
The effect of high-temperature annealing (HTA) at 1700°C on AlN films grown on 4H-SiC substrates by metalorganic vapor phase epitaxy has been studied. It is shown that the structural quality of…
High-Temperature Annealing of AlGaN
/forschung/publikationen/high-temperature-annealing-of-algan
In the past few years, high-temperature annealing of AlN has become a proven method for providing AlN layers with low dislocation densities. Herein, the example of Al0.77Ga0.23N is used to…
Design of an Embedded Broadband Thermoelectric Power Sensor in the InP DHBT Process
/forschung/publikationen/design-of-an-embedded-broadband-thermoelectric-power-sensor-in-the-inp-dhbt-process
The thermopile-based thermoelectric sensor has emerged as an important approach for microwave power measurement. It employs the Seebeck effect, which converts the microwave power into the heat and…
Lifetimes and Quantum Efficiencies of Quantum Dots Deterministically Positioned in Photonic-Crystal Waveguides
/forschung/publikationen/lifetimes-and-quantum-efficiencies-of-quantum-dots-deterministically-positioned-in-photonic-crystal-waveguides
Interfacing single emitters and photonic nanostructures enables modifying their emission properties, such as enhancing individual decay rates or controlling the emission direction. To achieve full…
Reliability of UVC LEDs fabricated on AlN/sapphire templates with different threading dislocation densities
/forschung/publikationen/reliability-of-uvc-leds-fabricated-on-alnsapphire-templates-with-different-threading-dislocation-densities
The impact of different AlN/sapphire template technologies [i.e., planar, epitaxial lateral overgrown (ELO), and high temperature annealed sputtered ELO] is studied with respect to the…
EuPRAXIA Conceptual Design Report
/forschung/publikationen/eupraxia-conceptual-design-report
This report presents the conceptual design of a new European research infrastructure EuPRAXIA. The concept has been established over the last four years in a unique collaboration of 41 laboratories…