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Evaluation of a GaN HEMT Half-Bridge embedded to a Multilayer Aluminum Nitride Substrate
/forschung/publikationen/evaluation-of-a-gan-hemt-half-bridge-embedded-to-a-multilayer-aluminum-nitride-substrate
Power electronic systems employing wide-bandgap GaN transistors promise high efficiency operation and superior power density but require minimized parasitic circuit elements and an effective cooling…
Enhanced Wall Plug Efficiency of AlGaN-Based Deep-UV LEDs Using Mo/Al as p-Contact
/forschung/publikationen/enhanced-wall-plug-efficiency-of-algan-based-deep-uv-leds-using-moal-as-p-contact
P-type contacts with a high reflectivity in the ultra-violet spectral region made of molybdenum/aluminum (Mo/Al) on AlGaN-based deep-ultraviolet light-emitting diodes (DUVLEDs) emitting at…
Theoretical investigation of a miniature microwave driven plasma jet
/forschung/publikationen/theoretical-investigation-of-a-miniature-microwave-driven-plasma-jet
Radio frequency driven plasma jets are compact plasma sources which are used in many advanced fields such as surface engineering or biomedicine. The MMWICP (miniature micro wave ICP) is a particular…
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications
/forschung/publikationen/the-influence-of-the-gate-trench-orientation-to-the-crystal-plane-on-the-conduction-properties-of-vertical-gan-misfets-for-laser-driving-applications
The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications E. Bahat Treidel, O. Hilt,…
Compact diode laser based light source with alternating dual-wavelength emission at 532 nm
/forschung/publikationen/compact-diode-laser-based-light-source-with-alternating-dual-wavelength-emission-at-532-nm
Compact nonlinear frequency conversion of a Y-branch distributed Bragg reflector (DBR) diode laser for alternating dual-wavelength laser emission at 532 nm is presented for the very first time.…
Impact of the capture time on the series resistance of quantum-well diode lasers
/forschung/publikationen/impact-of-the-capture-time-on-the-series-resistance-of-quantum-well-diode-lasers
Electrons and holes injected into a semiconductor heterostructure containing quantum wells are captured with a finite time. We show theoretically that this very fact can cause a considerable excess…
Deterministic positioning of nanophotonic waveguides around single self-assembled quantum dots
/forschung/publikationen/deterministic-positioning-of-nanophotonic-waveguides-around-single-self-assembled-quantum-dots
The capability to embed self-assembled quantum dots (QDs) at predefined positions in nanophotonic structures is key to the development of complex quantum-photonic architectures. Here, we demonstrate…
Impact of Insulators and Their Deposition Method on the Reliability of AlInGaN-Based UVB LEDs
/forschung/publikationen/impact-of-insulators-and-their-deposition-method-on-the-reliability-of-alingan-based-uvb-leds
AlInGaN-based light emitting diodes (LEDs) emitting in the ultraviolet (UV) wavelength range around 310 nm were fabricated using 300 nm thick SiNx or SiO2 layers deposited by different…
Status and Prospects of AlN Templates on Sapphire for Ultraviolet Light-Emitting Diodes
/forschung/publikationen/status-and-prospects-of-aln-templates-on-sapphire-for-ultraviolet-light-emitting-diodes
Herein, the scope is to provide an overview on the current status of AlN/sapphire templates for ultraviolet B (UVB) and ultraviolet C (UVC) light-emitting diodes (LEDs) with focus on the work done…
Electrical properties and microstructure formation of V/Al-based n-contacts on high Al mole fraction n-AlGaN layers
/forschung/publikationen/electrical-properties-and-microstructure-formation-of-val-based-n-contacts-on-high-al-mole-fraction-n-algan-layers
The electrical and structural properties of V/Al-based n-contacts on n-AlxGa1-xN with an Al mole fraction x ranging from x=0.75 to x=0.95 are investigated. Ohmic n-contacts are obtained up to x=0.75…