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Suchergebnisse 1311 bis 1320 von 5317

Highly compact GaN-based all-digital transmitter chain including SPDT T/Rx switch for massive MIMO applications

/forschung/publikationen/highly-compact-gan-based-all-digital-transmitter-chain-including-spdt-trx-switch-for-massive-mimo-applications

This paper presents a fully digital transmitter chain from baseband to antenna, including a modulator, two truly digital (i.e. fully switched) microwave power amplifiers and a transmit/receive…

Influence of substrate off-cut angle on the performance of 310 nm light emitting diodes

/forschung/publikationen/influence-of-substrate-off-cut-angle-on-the-performance-of-310-nm-light-emitting-diodes

The influence of the sapphire substrate off-cut angle from c-plane orientation on the surface morphology of AlN/AlGaN layers and the performance of 310 nm light emitting diode structures has…

Broadband Semiconductor Light Sources Operating at 1060 nm Based on InAs:Sb/GaAs Submonolayer Quantum Dots

/forschung/publikationen/broadband-semiconductor-light-sources-operating-at-1060-nm-based-on-inassbgaas-submonolayer-quantum-dots

In this paper, we investigate the potential of submonolayer-grown InAs:Sb/GaAs quantum dots as active medium for opto-electronic devices emitting in the 1060 nm spectral range. Grown as multiple…

Time-Dependent Simulation of Thermal Lensing in High-Power Broad-Area Semiconductor Lasers

/forschung/publikationen/time-dependent-simulation-of-thermal-lensing-in-high-power-broad-area-semiconductor-lasers

We propose a physically realistic and yet numerically applicable thermal model to account for short- and long-term self-heating within broad-area lasers. Although the temperature increase is small…

Impact of Carrier Nonpinning Effect on Thermal Power Saturation in GaAs-Based High Power Diode Lasers

/forschung/publikationen/impact-of-carrier-nonpinning-effect-on-thermal-power-saturation-in-gaas-based-high-power-diode-lasers

A root-cause analysis of thermal power saturation in broad area diode lasers is presented. Thermal power saturation limits in largest parts the optical power in continuous wave (CW) driven diode…

Coherent beam combining of high power quasi continuous wave tapered amplifiers

/forschung/publikationen/coherent-beam-combining-of-high-power-quasi-continuous-wave-tapered-amplifiers

We demonstrate coherent beam combining of four high brightness tapered amplifiers in pulsed, quasi continuous wave (QCW) operation, seeded by a 976 nm laser diode. The maximum power of…

Development and qualification of miniaturized, UHV-compatible optical systems for integrated atomic quantum technologies

/forschung/publikationen/development-and-qualification-of-miniaturized-uhv-compatible-optical-systems-for-integrated-atomic-quantum-technologies

While generation, manipulation, and detection of atomic quantum states in ultra-cold matter is well established within laboratory environments, the transfer of these techniques into field-compatible,…

Continuous wave THz source based on an electrically tunable monolithic two-color semiconductor diode laser

/forschung/publikationen/continuous-wave-thz-source-based-on-an-electrically-tunable-monolithic-two-color-semiconductor-diode-laser

We present a compact coherent CW THz source, based on optical heterodyning of a monolithically integrated two-color distributed Bragg reflector (DBR) semiconductor laser emitting at 785 nm with…

Passively mode-locked quantum-well semiconductor laser subject to ultra-short optical self-feedback with nanometric fine-delay

/forschung/publikationen/passively-mode-locked-quantum-well-semiconductor-laser-subject-to-ultra-short-optical-self-feedback-with-nanometric-fine-delay

Monolithic passively mode-locked (PML) semiconductor lasers emitting at 1070 nm are promising ultra-fast sources for new prospective photonic transport systems in a 1 µm transmission…

Dual-Wavelength Y-Branch DBR-RW Diode Laser at 785 nm with Adjustable Spectral Distance from 0 up to 1.6 nm

/forschung/publikationen/dual-wavelength-y-branch-dbr-rw-diode-laser-at-785-nm-with-adjustable-spectral-distance-from-0-up-to-16-nm

For several applications compact light sources are requested providing two stabilised wavelengths with a narrow linewidth. Applications are shifted excitation Raman difference spectroscopy (SERDS)…