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High-brightness wavelength stabilized diode lasers for sensor systems and non-linear frequency conversion
/forschung/publikationen/high-brightness-wavelength-stabilized-diode-lasers-for-sensor-systems-and-non-linear-frequency-conversion
High-brightness wavelength stabilized diode lasers emitting between 750nm and 1100nm with output powers up to 15W for sensor applications such as biomedical imaging and spectroscopy as well as for…
In-situ spectroscopic analysis of the recombination kinetics in UVB LEDs during their operation
/forschung/publikationen/in-situ-spectroscopic-analysis-of-the-recombination-kinetics-in-uvb-leds-during-their-operation
The recombination kinetics in the quantum well (QW) active region of ultraviolet light emitting diodes have been measured in situ during device operation. Non-radiative recombination is enhanced with…
D-band Point to Multi-Point Deployment with G-Band Transport
/forschung/publikationen/d-band-point-to-multi-point-deployment-with-g-band-transport
The first Point to Multi Point wireless system at D-band has been designed and is in advanced development. The European Commission H2020 ULTRAWAVE "Ultra capacity wireless layer beyond…
Emission behavior of distributed Bragg-reflector ridge waveguide lasers exposed to strong optical feedback
/forschung/publikationen/emission-behavior-of-distributed-bragg-reflector-ridge-waveguide-lasers-exposed-to-strong-optical-feedback
In this work, the influence of strong optical feedback on the emission behavior of distributed Bragg-reflector ridge waveguide diode lasers emitting at 1120 nm with different cavity lengths and…
Vertical GaN MISFET for chip-on-chip high speed laser driving applications
/forschung/publikationen/vertical-gan-misfet-for-chip-on-chip-high-speed-laser-driving-applications
In this work, the authors developed vertical gallium nitride metal-insulator-semiconductor field-effect transistors (GaN MISFETs) for direct chip-on-chip assembly with gallium arsenide-based broad…
Simulation of an Integrated UTC-Photodiode with a High-Speed TIA for 5G mm-Wave Generation
/forschung/publikationen/simulation-of-an-integrated-utc-photodiode-with-a-high-speed-tia-for-5g-mm-wave-generation
This work introduces a subsystem level co-simulation for generation, boosting and transmission of millimeter wave signals for 5G applications. The simulation processes to model the full equivalent…
Passive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector
/forschung/publikationen/passive-detection-and-imaging-of-human-body-radiation-using-an-uncooled-field-effect-transistor-based-thz-detector
This work presents, to our knowledge, the first completely passive imaging with human-body-emitted radiation in the lower THz frequency range using a broadband uncooled detector. The sensor consists…
A High-Isolation and Highly Linear Super-Wideband SPDT Switch in InP DHBT Technology
/forschung/publikationen/a-high-isolation-and-highly-linear-super-wideband-spdt-switch-in-inp-dhbt-technology
This work presents an SPDT switch with more than 235 GHz bandwidth, fabricated using 800 nm InP DHBT technology. Three cascaded shunt stages were used to achieve high isolation and…
High Efficiency, High Bandwidth Switch-Mode Envelope Tracking Supply Modulator
/forschung/publikationen/high-efficiency-high-bandwidth-switch-mode-envelope-tracking-supply-modulator
This paper presents a novel amplitude modulator concept for envelope tracking power amplifiers, which provides maximum efficiency in the lower output voltage ranges, thus nicely matching the…
L-Band Floating-Ground RF Power Amplifier for Reverse-Type Envelope Tracking Systems
/forschung/publikationen/l-band-floating-ground-rf-power-amplifier-for-reverse-type-envelope-tracking-systems
This paper presents a 50 W floating-ground RF power amplifier for L-Band applications. The amplifier is intended to be used in a reverse-type envelope tracking system with supply voltages of up…