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Integrated Atomic Quantum Technologies in Demanding Environments: Development and Qualification of Miniaturized Optical Setups and Integration Technologies for UHV and Space Operation
/forschung/publikationen/integrated-atomic-quantum-technologies-in-demanding-environments-development-and-qualification-of-miniaturized-optical-setups-and-integration-technologies-for-uhv-and-space-operation-1
Employing compact quantum sensors in field or in space (e.g., small satellites) implies demanding requirements on components and integration technologies. Within our work on integrated sensors, we…
Semiconductor laser modules for precision spectroscopy applications in space
/forschung/publikationen/semiconductor-laser-modules-for-precision-spectroscopy-applications-in-space
The Ferdinand-Braun-Institute has been developing high-power, narrow-linewidth semiconductor lasers for precision spectroscopy applications in harsh environments for more than ten years. Starting…
A New Laser Technology for LISA
/forschung/publikationen/a-new-laser-technology-for-lisa
Within the European Space Agency (ESA) activity "Gravitational Wave Observatory Metrology Laser" we designed a laser head to fulfill the LISA laser requirements using a non-NPRO seed laser…
High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes
/forschung/publikationen/high-current-stress-of-uv-b-inalgan-based-leds-defect-generation-and-diffusion-processes
The aim of this paper is to investigate the degradation mechanisms of UV-B AlGaN-based light-emitting diodes (LEDs) submitted to constant current stress beyond the typical application conditions. We…
Lateral 1.8 kV β-Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit
/forschung/publikationen/lateral-18-kv-beta-ga2o3-mosfet-with-155-mwcm2-power-figure-of-merit
Lateral β-Ga2O3 MOSFET for power switching applications with a 1.8 kV breakdown voltage and a record power figure of merit of 155 MW/cm2 are demonstrated. Sub-µm gate length…
Novel High-Power, High Repetition Rate Laser Diode Pump Modules Suitable for High-Energy Class Laser Facilities
/forschung/publikationen/novel-high-power-high-repetition-rate-laser-diode-pump-modules-suitable-for-high-energy-class-laser-facilities
The latest generation of high-energy-class pulsed laser facilities, under construction or planned, such as EuPRAXIA, require reliable pump sources with high power (many kW), brightness…
Traveling Wave Model Based Simulation of Tunable Multi-Wavelength Diode Laser Systems
/forschung/publikationen/traveling-wave-model-based-simulation-of-tunable-multi-wavelength-diode-laser-systems
We show simulation results of a compact, integrated and tunable multi-wavelength diode laser emitting around 785 nm. The presented design was optimized using passive waveguide simulations and then…
Extra half-plane shortening of dislocations as an origin of tensile strain in Si-doped (Al)GaN
/forschung/publikationen/extra-half-plane-shortening-of-dislocations-as-an-origin-of-tensile-strain-in-si-doped-algan
Si doping of (Al,Ga)N layers grown by metalorganic chemical vapor deposition induces an inclination of threading dislocations (TDs). This inclination leads to a change of the extra half-plane size of…
Concept for Continuously Tunable Output Filters for Digital Transmitter Architectures
/forschung/publikationen/concept-for-continuously-tunable-output-filters-for-digital-transmitter-architectures
This paper presents a novel output filter approach for continuously frequency-tunable digital power amplifiers, suitable for future seamless and band-less applications in 5G, e.g. for cognitive…
High power broad-area lasers with buried implantation for current confinement
/forschung/publikationen/high-power-broad-area-lasers-with-buried-implantation-for-current-confinement
Broad area lasers emitting near 915 nm are fabricated using a 2-step epitaxial growth process, with an intermediate implantation of silicon or oxygen ions. This approach allows for the…