Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
GaN digital microwave outphasing PA
/forschung/publikationen/gan-digital-microwave-outphasing-pa
This paper presents a novel GaN-based digital outphasing power amplifier (PA) for the 800 MHz range. The PA reaches a maximum output power of 5.8 W at 30 V final-stage (FS) drain…
Design of a 300 GHz externally Injection-Lockable Push-Push Oscillator for Beam Steering Applications
/forschung/publikationen/design-of-a-300-ghz-externally-injection-lockable-push-push-oscillator-for-beam-steering-applications
A design for a 300 GHz reflection type push-push oscillator including an input for an external injection locking signal is proposed. The oscillator is based on substrate transferred InP double…
The influence of the GaN substrate types and active area scaling design on the conduction properties of vertical GaN MISFETs for laser driving applications
/forschung/publikationen/the-influence-of-the-gan-substrate-types-and-active-area-scaling-design-on-the-conduction-properties-of-vertical-gan-misfets-for-laser-driving-applications
In this work we present a systematic study on the conduction properties in vertical GaN trench MISFETs grown and manufactured on different free standing GaN substrates. It is shown that devices…
Application of 280nm In-Situ Metrology to study the Influence of AlN Templates on Surface Roughness and Strain Effects in UVA/UVB LEDs
/forschung/publikationen/application-of-280nm-in-situ-metrology-to-study-the-influence-of-aln-templates-on-surface-roughness-and-strain-effects-in-uvauvb-leds
Traditional in-situ reflectometry sensing at blue (405 nm), red (630 nm) and NIR (950 nm) wavelengths cannot resolve variations in InAlGaN surface roughness or layer thickness with the…
The Impact of AlN Templates on Strain Relaxation Mechanisms during the MOVPE Growth of UVB-LED Structures
/forschung/publikationen/the-impact-of-aln-templates-on-strain-relaxation-mechanisms-during-the-movpe-growth-of-uvb-led-structures
Strain relaxation mechanisms in AlGaN based light emitting diodes emitting in the ultraviolet B spectral range (UVB-LEDs) grown on different AlN/sapphire templates are analyzed by combining in situ…
Hyperspectral terahertz imaging with electro-optic dual combs and a FET-based detector
/forschung/publikationen/hyperspectral-terahertz-imaging-with-electro-optic-dual-combs-and-a-fet-based-detector
In this paper, a terahertz hyperspectral imaging architecture based on an electro-optic terahertz dual-comb source is presented and demonstrated. In contrast to single frequency sources, this…
Milliwatt power 233 nm AlGaN-based deep UV-LEDs on sapphire substrates
/forschung/publikationen/milliwatt-power-233nbspnm-algan-based-deep-uv-leds-on-sapphire-substrates
Deep UV-LEDs (DUV-LEDs) emitting at 233 nm with an emission power of (1.9±0.3) mW and an external quantum efficiency of (0.36±0.07) % at 100 mA are presented. The…
Microsecond pulse-mode operation of a micro-integrated high-power external-cavity tapered diode laser at 808 nm
/forschung/publikationen/microsecond-pulse-mode-operation-of-a-micro-integrated-high-power-external-cavity-tapered-diode-laser-at-808nbspnm
We investigate microsecond pulse-mode operation of a micro-integrated high-power diode laser based on volume Bragg grating external-cavity feedback around 808 nm. The laser system contains a…
The 2020 UV emitter roadmap
/forschung/publikationen/the-2020-uv-emitter-roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al,In,Ga)N material system is best suited to produce LEDs and laser diodes from 400 nm down to 210 nm - due…
Micro-Integrated Laser Modules for Optical Clocks
/forschung/publikationen/micro-integrated-laser-modules-for-optical-clocks
A micro-integrated laser module has been developed for the deployment in a compact, transportable 171Yb+ optical clock. With this laser module, the clock laser system demonstrated a Modified Allan…