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Technology for D-band/G-band ultra capacity layer
/forschung/publikationen/technology-for-d-bandg-band-ultra-capacity-layer
The bands above 100 GHz offer outstanding potentiality for fixed wireless communications, matching the capacity requirements of future mobile networks backhaul in dense urban scenarios. However,…
Reconfigurable GaN Digital Tx Applying BST Bandpass Filter
/forschung/publikationen/reconfigurable-gan-digital-tx-applying-bst-bandpass-filter
The paper presents the first tunable GaN-based digital transmitter chain for 0.8-1.8 GHz range, suitable for MIMO systems in software-defined radio (SDR) installations. The demonstrator includes…
A Reconfigurable Modulator for Digital Outphasing Transmitters
/forschung/publikationen/a-reconfigurable-modulator-for-digital-outphasing-transmitters
This paper presents the next development stage of baseband-transparent modulators for digital microwave amplifiers. A modulator, used for encoding the baseband signal into a bitstream suitable for…
A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology
/forschung/publikationen/a-175-ghz-bandwidth-high-linearity-distributed-amplifier-in-500-nm-inp-dhbt-technology
This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set…
Highly linear 90-170 GHz SPDT Switch with High Isolation for Fully Integrated InP Transceivers
/forschung/publikationen/highly-linear-90-170-ghz-spdt-switch-with-high-isolation-for-fully-integrated-inp-transceivers
This work reports a high-isolation SPDT switch realized in an 800-nm InP DHBT process. The circuit is based on shunt topology employing two cascaded shunt stages. This enhances the isolation while…
Thermally stable iridium contacts to highly doped p-In0:53Ga0:47As for indium phosphide double heterojunction bipolar transistors
/forschung/publikationen/thermally-stable-iridium-contacts-to-highly-doped-p-in053ga047as-for-indium-phosphide-double-heterojunction-bipolar-transistors
We report on surface pretreatment for ohmic contacts to p-doped In0.53Ga0.47As with improved thermal stability. It is found that the cleaning of In0.53Ga0.47As surface by ammonium sulfide or sulfuric…
Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes
/forschung/publikationen/current-induced-degradation-and-lifetime-prediction-of-310-nm-ultraviolet-light-emitting-diodes
The impact of operation current on the degradation behavior of 310 nm UV LEDs is investigated over 1000 h of stress. It ranges from 50 to 300 mA and corresponds to current densities…
A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector With Integrated Broadband Bow-Tie Antenna
/forschung/publikationen/a-high-sensitivity-algangan-hemt-terahertz-detector-with-integrated-broadband-bow-tie-antenna
Many emerging applications in the terahertz (THz)frequency range demand highly sensitive, broadband detectors for room-temperature operation. Field-effect transistors with integrated antennas for THz…
Compact and robust diode laser system technology for dual-species ultracold atom experiments with rubidium and potassium in microgravity
/forschung/publikationen/compact-and-robust-diode-laser-system-technology-for-dual-species-ultracold-atom-experiments-with-rubidium-and-potassium-in-microgravity
We present a compact and robust distributed-feedback diode laser system architecture for ultracold atom experiments with 41K and 87Rb in a mobile setup operating at the ZARM drop tower in Bremen. Our…
Iodine Frequency Reference on a Sounding Rocket
/forschung/publikationen/iodine-frequency-reference-on-a-sounding-rocket
We build a self-contained optical absolute frequency reference at 1064 nm based on the rovibronic transition R(56)32-0 in molecular iodine and operate this instrument in space on a sounding…