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GaN Digital Outphasing PA
/forschung/publikationen/gan-digital-outphasing-pa
This paper presents a novel GaN-based digital outphasing power amplifier for 800 MHz. The PA reaches a maximum output power of 5.8 W at 30 V final-stage drain supply voltage. A novel…
Integrated atomic quantum technologies in demanding environments: development and qualification of miniaturized optical setups and integration technologies for UHV and space operation
/forschung/publikationen/integrated-atomic-quantum-technologies-in-demanding-environments-development-and-qualification-of-miniaturized-optical-setups-and-integration-technologies-for-uhv-and-space-operation
Employing quantum sensors in field or in space implies demanding requirements on the used components and integration technologies. Within our work on compact atomic sensors, we develop miniaturized,…
Impact of Substrate Termination on Dynamic On-State Characteristics of a Normally-off Monolithically Integrated Bidirectional GaN HEMT
/forschung/publikationen/impact-of-substrate-termination-on-dynamic-on-state-characteristics-of-a-normally-off-monolithically-integrated-bidirectional-gan-hemt
The dynamic on-state resistance of monolithically integrated bidirectional GaN HEMTs assuming hardswitching in half-bridge topology is studied for different approaches of substrate termination.…
Lateral and vertical power transistors in GaN and Ga2O3
/forschung/publikationen/lateral-and-vertical-power-transistors-in-gan-and-ga2o3
Vertical silicon carbide transistors ant lateral gallium nitride (GaN) transisitors for power-electronic applications currently target applications with different voltage and power ratings.…
High Duty Cycle, High Repetition Rate High Brightness Diode Laser Pulsed-Pump-Sources
/forschung/publikationen/high-duty-cycle-high-repetition-rate-high-brightness-diode-laser-pulsed-pump-sources
A diode laser pump source is presented using passive side-cooling to enable >10% duty cycle (optimal cooling, long time constants). 6 kW output (1.4 MW/cm2/sr ex-fiber) is…
Electroplated Gold Microstuds for Thermocompression Bonding of UV LED Chips
/forschung/publikationen/electroplated-gold-microstuds-for-thermocompression-bonding-of-uv-led-chips
A bonding technology using electroplated Au microstuds for ultraviolet (UV) light-emitting diodes (LEDs) has been investigated. Au studs with diameter, height, and pitch of about 15, 8, and…
HOM damping options for the Z-Pole operatingscenario of FCC-ee
/forschung/publikationen/hom-damping-options-for-the-z-pole-operatingscenario-of-fcc-ee
The Z-pole option of FCC-ee is an Ampere class machine with a beam current of 1.39 A. Due to high HOM power and strong HOM damping requirements, the present baseline of FCC-ee considers a…
Approaches for higher power in GaAs-based broad area diode lasers
/forschung/publikationen/approaches-for-higher-power-in-gaas-based-broad-area-diode-lasers
We present here a comparison of design approaches for improved continuous wave electro optical performance in GaAs-based high power broad area diode lasers emitting at 970 nm. Diode lasers with…
The QUEEN mission to demonstrate an optical Rb frequency reference payload and advanced small satellite platform technology
/forschung/publikationen/the-queen-mission-to-demonstrate-an-optical-rb-frequency-reference-payload-and-advanced-small-satellite-platform-technology
The QUEEN mission is a microsatellite mission aimed at the demonstration of an optical frequency reference payload and advanced small satellite platform technology in orbit. Following the continuous…
Thermal boundary resistance between GaAs and p-side metal as limit to high power diode lasers
/forschung/publikationen/thermal-boundary-resistance-between-gaas-and-p-side-metal-as-limit-to-high-power-diode-lasers
Studies are presented on the anomalously high thermal boundary resistance observed in efficient high power diode lasers between the p-side contact and metal submount. This barrier is responsible for…