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MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs
/forschung/publikationen/movpe-grown-algan-based-tunnel-heterojunctions-enabling-fully-transparent-uvc-leds
We report on AlGaN-based tunnel heterojunctions grown by metalorganic vapor phase epitaxy enabling fully transparent UVC LEDs by eliminating the absorbing p-AlGaN and p-GaN layers. Furthermore, the…
On-chip integration of single solid-state quantum emitters with a SiO2 photonic platform
/forschung/publikationen/on-chip-integration-of-single-solid-state-quantum-emitters-with-a-sio2-photonic-platform
One important building block for future integrated nanophotonic devices is the scalable on-chip interfacing of single photon emitters and quantum memories with single optical modes. Here we present…
Crosstalk Effects of Differential Thin-Film Microstrip Lines in Multilayer Motherboards
/forschung/publikationen/crosstalk-effects-of-differential-thin-film-microstrip-lines-in-multilayer-motherboards
With increasing demand for miniaturization the requirements for packaging and system integration are more challenging especially when more and more components are to be integrated into a compact…
Class-G Supply Modulation for MIMO and Radar with Phased Array Antennas
/forschung/publikationen/class-g-supply-modulation-for-mimo-and-radar-with-phased-array-antennas
Class-G supply modulation, i.e., discrete level supply modulation, is a powerful efficiency enhancement technique. It allows wideband modulated operation of RF power amplifiers and high output power.…
Influence of Microwave Probes on Calibrated On-Wafer Measurements
/forschung/publikationen/influence-of-microwave-probes-on-calibrated-on-wafer-measurements
On-wafer probing with ground-signal-ground (GSG) probes contributes a variety of side effects, which are related to the measured line type, the carrier material, the layout with the neighboring…
Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability
/forschung/publikationen/time-resolved-photoluminescence-from-n-doped-ganal018ga082n-short-period-superlattices-probes-carrier-kinetics-and-long-term-structural-stability
Heavily n-doped GaN/Al0.18Ga0.82N short-period superlattices with and without SiN protection layers are studied in spectrally and temporally resolved photoluminescence (PL) experiments. The…
Power Amplifier Supply Modulators
/forschung/publikationen/power-amplifier-supply-modulators
RF power amplifiers (PAs) are used in mobile communication networks for the amplification of the modulated RF signals. Linear RF PAs suffer from severe efficiency degradation if the output power is…
Optical Quantum Technologies for Compact Rubidium Vapor-cell Frequency Standards in Space Using Small Satellites
/forschung/publikationen/optical-quantum-technologies-for-compact-rubidium-vapor-cell-frequency-standards-in-space-using-small-satellites
As part of the phase 0/A of the QUEEN mission, we evaluated our payload and satellite platform heritage and studied feasible mission scenarios for demonstrating optical frequency references aboard…
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
/forschung/publikationen/the-emergence-and-prospects-of-deep-ultraviolet-light-emitting-diode-technologies
By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned to cover almost the entire ultraviolet spectral range (210-400 nm), making ultraviolet light-emitting diodes…
Terahertz emission from biased AlGaN/GaN high-electron-mobility transistors
/forschung/publikationen/terahertz-emission-from-biased-algangan-high-electron-mobility-transistors
We report on the results of a comprehensive study of THz emission from a set of dedicated AlGaN/GaN high-electron-mobility transistors. We find that voltage-biased transistors indeed emit in the THz…