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Perspektiven nach der Promotion - German Research Institutions
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Alternative jobs and research fields in the surrounding of universities: German Research Institutions for international PhD-candidates.
First W-Band InP DHBT Digital Power Amplifier
/forschung/forschungsnews/first-w-band-inp-dhbt-digital-power-amplifier
Emerging applications for high-speed communication or radar systems are driving the need for W-band power amplifiers (PA). Recently, the FBH for the first time developed a high-efficiency W-band…
IEEE Semiconductor Interface Specialists Conference (SISC)
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Das FBH präsentiert ein Poster auf der Konferenz
Using Physical Disorder to Fight Product Piracy and Secure Banknotes
/forschung/forschungsnews/using-physical-disorder-to-fight-product-piracy-and-secure-banknotes
Using Physical Disorder to Fight Product Piracy and Secure Banknotes Dr. Ing. Ulrich RührmairRuhr-Universität Bochum
Chorafas-Preis an Neysha Lobo Ploch verliehen
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Für ihre Dissertation "Chip designs for high efficiency III-nitride based ultraviolet light emitting diodes with enhanced light extraction" wurde Frau Dr. Neysha Lobo Ploch kürzlich mit dem…
Quantitative Bestimmung von Matrix- und Verunreinigungs-Elementen in AlGaN mittels Sekundärionen-Massenspektrometrie (SIMS)
/forschung/forschungsnews/quantitative-bestimmung-von-matrix-und-verunreinigungs-elementen-in-algan-mittels-sekundaerionen-massenspektrometrie-sims
Das Materialsystem Aluminiumgalliumnitrid (AlGaN) wird zunehmend attraktiv für UV-basierte optoelektronische Bauelemente wie lichtemittierende Dioden (LED), Laserdioden und Fotodetektoren. Die…
Diode laser based deep ultraviolet Raman excitation
/forschung/forschungsnews/diode-laser-based-deep-ultraviolet-raman-excitation
One of the biggest challenges in Raman spectroscopy is to avoid or minimize the typically strong fluorescence background that can, in some cases, even mask the relatively weak Raman signal.
Highly Efficient High-Power G-band Frequency Multiplier in Transferred-Substrate InP DHBT Technology
/forschung/forschungsnews/highly-efficient-high-power-g-band-frequency-multiplier-in-transferred-substrate-inp-dhbt-technology
The frequency range between 100 GHz and 1 THz offers large bandwidth for high-speed communications as well as improved spatial resolution for radar sensors and imaging systems due to the short…
Wafer-level hetero-integrated InP DHBT/SiGe BiCMOS technology for mm-wave and sub-THz applications
/forschung/forschungsnews/wafer-level-hetero-integrated-inp-dhbtsige-bicmos-technology-for-mm-wave-and-sub-thz-applications
The mm-wave and sub-THz region from 100 to beyond 500 GHz holds many promises for emerging applications such as ultra-wideband wireless communications, high-resolution radar, spectroscopic sensing...
Mechanismen zur Erzeugung von Pikosekunden-Pulsen mit GaN-basierten Laserdioden
/forschung/forschungsnews/mechanismen-zur-erzeugung-von-pikosekunden-pulsen-mit-gan-basierten-laserdioden
Mechanismen zur Erzeugung von Pikosekunden-Pulsen mit GaN-basierten Laserdioden Prof. Dr. Ulrich T. SchwarzTU Chemnitz