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AlN and AlN/Al2O3 seed layers from atomic layer deposition for epitaxialgrowth of AlN on sapphire
/forschung/publikationen/aln-and-alnal2o3-seed-layers-from-atomic-layer-deposition-for-epitaxialgrowth-of-aln-on-sapphire
The annealing of amorphous AlN and AlN/Al2O3 seed layers from atomic layer deposition (ALD) on sapphire substrates and their application as starting layers for metal-organic vapor phase epitaxial…
Coherent combining of high brightness tapered amplifiers for efficient non-linear conversion
/forschung/publikationen/coherent-combining-of-high-brightness-tapered-amplifiers-for-efficient-non-linear-conversion
We report on a coherent beam combination of three high-brightness tapered amplifiers, which are seeded by a single-frequency laser at λ = 976 nm in a simple architecture with…
Efficient coupling of dynamic electro-optical and heat-transport models for high-power broad-area semiconductor lasers
/forschung/publikationen/efficient-coupling-of-dynamic-electro-optical-and-heat-transport-models-for-high-power-broad-area-semiconductor-lasers
In this work, we discuss the modeling of edge-emitting high-power broad-area semiconductor lasers. We demonstrate an efficient iterative coupling of a slow heat transport (HT) model defined on…
Influence of quartz on silicon incorporation in HVPE grown AlN
/forschung/publikationen/influence-of-quartz-on-silicon-incorporation-in-hvpe-grown-aln
Aluminum nitride growth via hydride vapor phase epitaxy has been investigated with respect to impurity uptake. The precursor aluminum chloride was identified to react with quartz glass and provide…
A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements
/forschung/publikationen/a-streamlined-drain-lag-model-for-gan-hemts-based-on-pulsed-s-parameter-measurements
Accurately and efficiently modeling the drain-lag effects is crucial in nonlinear large-signal modeling for Gallium Nitride high electron mobility transistors. In this paper, a simplified yet…
Influence of silicon doping on internal quantum efficiency and threshold of optically pumped deep UV AlGaN quantum well lasers
/forschung/publikationen/influence-of-silicon-doping-on-internal-quantum-efficiency-and-threshold-of-optically-pumped-deep-uv-algan-quantum-well-lasers
The influence of silicon doping on optically pumped AlGaN quantum well (QW) lasers has been analyzed. Either the QWs, quantum barriers, or the whole heterostructure were doped with Si concentrations…
Improving the spectral performance of extended cavity diode lasers using angled-facet laser diode chips
/forschung/publikationen/improving-the-spectral-performance-of-extended-cavity-diode-lasers-using-angled-facet-laser-diode-chips
We present and compare theoretical and experimental results on the electro-optical performance of extended cavity diode lasers (ECDLs) that employ two ridge waveguide designs for the…
Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN
/forschung/publikationen/crystal-defect-analysis-in-aln-layers-grown-by-movpe-on-bulk-aln
MOVPE growth of AlN layers on bulk AlN substrates with low threading dislocation density (< 105 cm-2) can result in enhanced defect formation. Chemo-mechanical polishing (CMP) of bulk…
Efficient Tm:YAG and Tm:LuAG lasers pumped by 681 nm tapered diodes
/forschung/publikationen/efficient-tmyag-and-tmluag-lasers-pumped-by-681nbspnm-tapered-diodes
In this paper, we present highly efficient continuous-wave (cw) laser operation of Tm:YAG and Tm:LuAG lasers pumped by high-brightness red tapered diodes. The single-emitter tapered diode lasers…
Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment
/forschung/publikationen/simulation-of-the-rf-power-performance-of-a-gan-hfet-and-comparison-to-experiment
The large-signal RF power performance of an AlGaN/GaN heterostructure field-effect transistor (HFET) is simulated by technology computer-aided design (TCAD) software, and compared to measurement. A…