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TeraFET multi-pixel THz array for a confocal imaging system
/forschung/publikationen/terafet-multi-pixel-thz-array-for-a-confocal-imaging-system
We present a THz detector based on AlGaN/GaN HEMT technology implemented for a multi-pixel array and tested in a confocal THz imaging system. The multi-pixel array shows good homogeneity where the…
Sub-THz components for high capacity point to multipoint wireless networks
/forschung/publikationen/sub-thz-components-for-high-capacity-point-to-multipoint-wireless-networks
The first point to multipoint wireless system at D-band (141 - 148.5 GHz), providing high capacity area sectors fed by high data rate G-band (275 - 305 GHz) links connected to fiber access…
A 240 GHz Active Multiplier-Based Signal Source for Millimeter-Wave/Terahertz Applications
/forschung/publikationen/a-240-ghz-active-multiplier-based-signal-source-for-millimeter-waveterahertz-applications
This paper presents a 240 GHz signal source using a 0.8 µm transferred substrate (TS) InP-HBT technology. The source is based on an active tripler and delivers -3 dBm peak output…
The scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films
/forschung/publikationen/the-scanning-electron-microscope-as-a-flexible-tool-for-investigating-the-properties-of-uv-emitting-nitride-semiconductor-thin-films
In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and…
Efficient active multiplier-based signal source for >300 GHz system applications
/forschung/publikationen/efficient-active-multiplier-based-signal-source-for-gt300-ghz-system-applications
This Letter presents a 300 GHz signal source, realised using an 800 nm transferred-substrate InP double heterojunction bipolar transistor process. The source is based on an active frequency…
A 300 GHz Active Frequency Tripler in Transferred-Substrate InP DHBT Technology
/forschung/publikationen/a-300-ghz-active-frequency-tripler-in-transferred-substrate-inp-dhbt-technology
This paper presents a monolithic integrated active frequency tripler implemented in an InP double heterojunction bipolar transistor (DHBT) transferred-substrate (TS) technology. The active tripler is…
A GaN-HEMT with Floating LF Ground for Reverse Operation in Integrated RF Power Circuits
/forschung/publikationen/a-gan-hemt-with-floating-lf-ground-for-reverse-operation-in-integrated-rf-power-circuits
An integrated GaN-HEMT with floating low-frequency (LF) ground is presented. The floating LF ground enables reverse operation in RF applications making operation at offset DC and LF voltages…
A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBT
/forschung/publikationen/a-05-thz-signal-source-with-11-dbm-peak-output-power-based-on-inp-dhbt
This paper presents a 0.5 THz oscillator, realized using a transferred-substrate (TS) 0.3 µm InP DHBT process. It delivers -11 dBm peak output power. The DC consumption is only…
Limiting the Output Power of Rugged GaN LNAs
/forschung/publikationen/limiting-the-output-power-of-rugged-gan-lnas
Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient…
Packaged Floating-Ground RF Power GaN-HEMT
/forschung/publikationen/packaged-floating-ground-rf-power-gan-hemt
This paper presents a novel packaged RF power GaN-HEMT for floating-ground operation. A bondable singlelayer capacitor is mounted in the package close to the transistor chip to provide the low…