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Repetition rate control of optical self-injected passively mode-locked quantum-well lasers: experiment and simulation
/forschung/publikationen/repetition-rate-control-of-optical-self-injected-passively-mode-locked-quantum-well-lasers-experiment-and-simulation
The pulse repetition rate (RR) tuning and locking range (LR) as well as the pulse train timing stability of passively mode-locked quantum-well (QW) semiconductor lasers (SCLs) subject to…
Chip-carrier thermal barrier and its impact on lateral thermal lens profile and beam parameter product in high power broad area lasers
/forschung/publikationen/chip-carrier-thermal-barrier-and-its-impact-on-lateral-thermal-lens-profile-and-beam-parameter-product-in-high-power-broad-area-lasers
High power broad area diode lasers with high optical power density in a small focus spot are in strong commercial demand. For this purpose, the beam quality, quantified via the beam parameter product…
Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors
/forschung/publikationen/impact-of-open-core-threading-dislocations-on-the-performance-of-algan-metal-semiconductor-metal-photodetector
The influence of open-core threading dislocations on the bias-dependent external quantum efficiency (EQE) of bottom-illuminated Al0.5Ga0.5N/AlN metal-semiconductor-metal (MSM) photodetectors (PDs) is…
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/ sapphire
/forschung/publikationen/algan-based-deep-uv-leds-grown-on-sputtered-and-high-temperature-annealed-aln-sapphire
The performance characteristics of AlGaN-based deep ultraviolet light emitting diodes (UV-LEDs) grown by metalorganic vapor phase epitaxy on sputtered and high temperature annealed AlN/sapphire…
Compact RGBY light sources with high luminance for laser display applications
/forschung/publikationen/compact-rgby-light-sources-with-high-luminance-for-laser-display-applications
Watt-class visible laser light with a high luminance can be created with high-power GaAs-based lasers either directly in the red spectral region or using single-pass second harmonic generation (SHG)…
Chalmers GaN HEMT Charge Model Revisited
/forschung/publikationen/chalmers-gan-hemt-charge-model-revisited
This paper presents a charge modeling procedure based on the Chalmers GaN HEMT charge model. The impact of the transcapacitances in large-signal charge modeling is investigated. It is shown that the…
A 95 GHz Bandwidth 12 dBm Output Power Distributed Amplifier in InP-DHBT Technology for Optoelectronic Applications
/forschung/publikationen/a-95-ghz-bandwidth-12-dbm-output-power-distributed-amplifier-in-inp-dhbt-technology-for-optoelectronic-applications
This paper presents a DC-95 GHz distributed amplifier (DA) based on an InP/GaAsSb/InP 800 nm DHBT technology. The circuit employs five cascode unit cells with…
Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells
/forschung/publikationen/influence-of-template-properties-and-quantum-well-number-on-stimulated-emission-from-al07ga03nal08ga02n-quantum-wells
AlGaN multiple quantum well laser heterostructures for emission around 240 nm have been grown by metalorganic vapor phase epitaxy on epitaxially laterally overgrown (ELO) AlN/sapphire templates.…
Ultrafast carrier dynamics in a GaN/Al0.18Ga0.82N superlattice
/forschung/publikationen/ultrafast-carrier-dynamics-in-a-ganal018ga082n-superlattice
Relaxation processes of photoexcited carriers in a GaN/Al0.18Ga0.82N superlattice are studied in femtosecond spectrally resolved reflectivity measurements at ambient temperature. The transient…
Red-emitting distributed-feedback ridge-waveguide laser based on high-order surface grating
/forschung/publikationen/red-emitting-distributed-feedback-ridge-waveguide-laser-based-on-high-order-surface-grating
Distributed-feedback ridge-waveguide lasers emitting around 670 nm have been fabricated and experimentally characterised. Wavelength stabilisation is provided by 40th Bragg order surface…