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A New Laser Technology for LISA
/forschung/publikationen/a-new-laser-technology-for-lisa
Within the European Space Agency (ESA) activity "Gravitational Wave Observatory Metrology Laser" we designed a laser head to fulfill the LISA laser requirements using a non-NPRO seed laser…
High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes
/forschung/publikationen/high-current-stress-of-uv-b-inalgan-based-leds-defect-generation-and-diffusion-processes
The aim of this paper is to investigate the degradation mechanisms of UV-B AlGaN-based light-emitting diodes (LEDs) submitted to constant current stress beyond the typical application conditions. We…
Lateral 1.8 kV β-Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit
/forschung/publikationen/lateral-18-kv-beta-ga2o3-mosfet-with-155-mwcm2-power-figure-of-merit
Lateral β-Ga2O3 MOSFET for power switching applications with a 1.8 kV breakdown voltage and a record power figure of merit of 155 MW/cm2 are demonstrated. Sub-µm gate length…
Novel High-Power, High Repetition Rate Laser Diode Pump Modules Suitable for High-Energy Class Laser Facilities
/forschung/publikationen/novel-high-power-high-repetition-rate-laser-diode-pump-modules-suitable-for-high-energy-class-laser-facilities
The latest generation of high-energy-class pulsed laser facilities, under construction or planned, such as EuPRAXIA, require reliable pump sources with high power (many kW), brightness…
Traveling Wave Model Based Simulation of Tunable Multi-Wavelength Diode Laser Systems
/forschung/publikationen/traveling-wave-model-based-simulation-of-tunable-multi-wavelength-diode-laser-systems
We show simulation results of a compact, integrated and tunable multi-wavelength diode laser emitting around 785 nm. The presented design was optimized using passive waveguide simulations and then…
Extra half-plane shortening of dislocations as an origin of tensile strain in Si-doped (Al)GaN
/forschung/publikationen/extra-half-plane-shortening-of-dislocations-as-an-origin-of-tensile-strain-in-si-doped-algan
Si doping of (Al,Ga)N layers grown by metalorganic chemical vapor deposition induces an inclination of threading dislocations (TDs). This inclination leads to a change of the extra half-plane size of…
Concept for Continuously Tunable Output Filters for Digital Transmitter Architectures
/forschung/publikationen/concept-for-continuously-tunable-output-filters-for-digital-transmitter-architectures
This paper presents a novel output filter approach for continuously frequency-tunable digital power amplifiers, suitable for future seamless and band-less applications in 5G, e.g. for cognitive…
High power broad-area lasers with buried implantation for current confinement
/forschung/publikationen/high-power-broad-area-lasers-with-buried-implantation-for-current-confinement
Broad area lasers emitting near 915 nm are fabricated using a 2-step epitaxial growth process, with an intermediate implantation of silicon or oxygen ions. This approach allows for the…
ZERODUR® based optical systems for quantum gas experiments in space
/forschung/publikationen/zerodurreg-based-optical-systems-for-quantum-gas-experiments-in-space
Numerous quantum technologies make use of a microgravity environment e.g. in space. Operating in this extreme environment makes high demands on the experiment and especially the laser system…
Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology
/forschung/publikationen/design-and-modeling-of-an-ultra-wideband-low-noise-distributed-amplifier-in-inp-dhbt-technology
This paper reports on an ultra-wideband low-noise distributed amplifier (LNDA) in a transferred-substrate InP double heterojunction bipolar transistor (DHBT) technology which exhibits a uniform…