Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
Preface - JSS Focus Issue on Recent Advances in Wide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki
/forschung/publikationen/preface-jss-focus-issue-on-recent-advances-in-wide-bandgap-iii-nitride-devices-and-solid-state-lighting-a-tribute-to-isamu-akasaki
Preface - JSS Focus Issue on Recent Advances in Wide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki F. Ren1, K.C. Mishra2, H. Amano3,…
Improvement in the Reliability of AlGaInP-Based Light-Emitting Diode Package Using Optimal Silicone and Leadframe Structure
/forschung/publikationen/improvement-in-the-reliability-of-algainp-based-light-emitting-diode-package-using-optimal-silicone-and-leadframe-structure-1
We investigated how the reliability of red light-emitting diode (LED) packages was affected by the types of silicones and package structures. The tensile strengths of different types of silicones…
Nanopatterned sapphire substrates in deep-UVLEDs: is there an optical benefit?
/forschung/publikationen/nanopatterned-sapphire-substrates-in-deep-uvleds-is-there-an-optical-benefit
Light emitting diodes (LEDs) in the deep ultra-violet (DUV) offer new perspectives for multiple applications ranging from 3D printing to sterilization. However, insufficient light extraction severely…
Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks
/forschung/publikationen/bandwidth-improvement-of-mmic-single-pole-double-throw-passive-hemt-switches-with-radial-stubs-in-impedance-transformation-networks
In this paper, we propose a new configuration for improving the isolation bandwidth of MMIC single-pole-double-throw (SPDT) passive high-electron-mobility transistor (HEMT) switches operating at…
Continuous-wave operation of DFB laser diodes based on GaN using 10th-order laterally coupled surface gratings
/forschung/publikationen/continuous-wave-operation-of-dfb-laser-diodes-based-on-gan-using-10th-order-laterally-coupled-surface-gratings
Single longitudinal mode continuous-wave operation of distributed-feedback (DFB) laser diodes based on GaN is demonstrated using laterally coupled 10th-order surface Bragg gratings. The gratings…
AlGaN/GaN HEMT based sensor and system for polar liquid detection
/forschung/publikationen/algangan-hemt-based-sensor-and-system-for-polar-liquid-detection
In this paper, a GaN-high electron mobility transistor (HEMT) based sensor is designed, fabricated and characterized for polar liquid sensing. The fabricated HEMT sensor chip is packaged by using low…
Growth and Properties of Intentionally Carbon-Doped GaN Layers
/forschung/publikationen/growth-and-properties-of-intentionally-carbon-doped-gan-layers
Carbon-doping of GaN layers with thickness in the mm-range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi-insulating behavior with a…
Designing sapphire surface patterns to promote AlGaN overgrowth in hydride vapor phase epitaxy
/forschung/publikationen/designing-sapphire-surface-patterns-to-promote-algan-overgrowth-in-hydride-vapor-phase-epitaxy
Lateral overgrowth of patterned c-plane oriented sapphire substrates(PSS) with AlGaN using hydride vapor phase epitaxy was investigated with focus on how to suppress parasitic non c-planar…
Highly Efficient High-Brightness 970nm Ridge Waveguide Lasers
/forschung/publikationen/highly-efficient-high-brightness-970nm-ridge-waveguide-lasers
In this letter we present new results on high power 970 nm ridge waveguide lasers based on an extreme double asymmetric epitaxial design. Due to an improved lateral-longitudinal design an…
Generalization of coupled S-parameter calculation to compute beam impedances in particle accelerators
/forschung/publikationen/generalization-of-coupled-s-parameter-calculation-to-compute-beam-impedances-in-particle-accelerators
In this article, a decomposition approach for the computation of beam coupling impedances is proposed. This approach can account for the mutual electromagnetic coupling in long accelerator structures…