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Stress control of tensile-strained In1-xGaxP nanomechanical string resonators
/forschung/publikationen/stress-control-of-tensile-strained-in1-xgaxp-nanomechanical-string-resonators
We investigate the mechanical properties of freely suspended nanostrings fabricated from tensile-stressed, crystalline In1-xGaxP. The intrinsic strain arises during epitaxial growth as a consequence…
Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage measurements
/forschung/publikationen/accurate-determination-of-polarization-fields-in-0-0-0-1-c-plane-inalngan-heterostructures-with-capacitance-voltage-measurements
In this paper the internal electric fields of nearly lattice matched InAlN/GaN heterostructures were determined. Pin-diodes containing InAlN/GaN heterostructures grown on (0001) sapphire substrates…
Novel monolithically integrated bidirectional GaN HEMT
/forschung/publikationen/novel-monolithically-integrated-bidirectional-gan-hemt
Lateral chip architecture of GaN power semiconductors enables design of a monolithically integrated GaN HEMT featuring bidirectional blocking capability. The proposed bidirectional GaN HEMT allows…
Sub-picosecond pulsed THz FET detector characterization in plasmonic detection regime based on autocorrelation technique
/forschung/publikationen/sub-picosecond-pulsed-thz-fet-detector-characterization-in-plasmonic-detection-regime-based-on-autocorrelation-technique
Many THz applications require detection of sub-picosecond THz pulses. Electronic detectors, in particular, can address this challenge. We report on the detection of sub-picosecond THz pulses…
Efficient coupling of heat-flow and electro-optical models for simulation of dynamics in high-power broad-area semiconductor lasers
/forschung/publikationen/efficient-coupling-of-heat-flow-and-electro-optical-models-for-simulation-of-dynamics-in-high-power-broad-area-semiconductor-lasers
The aim of the work presented here is an efficient coupling of a heat flow (HF) model defined on multiple vertical-lateral subdomains and a dynamic electro-optical (EO) model acting in the…
AlGaN multi-quantum barriers for electron blocking in group III-nitride devices
/forschung/publikationen/algan-multi-quantum-barriers-for-electron-blocking-in-group-iii-nitride-devices
In this paper we investigate the enhancement of electron blocking in AlGaN multi-quantum barriers (MQBs). Simulations of effective barrier height of Al0.2Ga0.8N/GaN-MQBs were performed in order to…
Tri-carbon defects in carbon doped GaN
/forschung/publikationen/tri-carbon-defects-in-carbon-doped-gan
Carbon doped GaN crystals grown by hydride vapor phase epitaxy have been investigated using mid-infrared and near-ultraviolet absorption spectroscopy. Two local vibrational modes (LVMs) at…
Localization of current-induced degradation effects in (InAlGa)N-based UV-B LEDs
/forschung/publikationen/localization-of-current-induced-degradation-effects-in-inalgan-based-uv-b-leds
The degradation behavior of ultraviolet-B light emitting diodes (UV-B LEDs) emitting near 310 nm has been investigated and a method to localize the degradation effects is presented. Measurements…
On the optical polarization properties of semipolar (2021) and (2021) InGaN/GaN quantum wells
/forschung/publikationen/on-the-optical-polarization-properties-of-semipolar-2021-and-2021-ingangan-quantum-wells
In the framework of k·p-theory, semipolar (2021) and (2021) InGaN/GaN quantum wells (QWs) have equivalent band structures and are expected to have identical optical polarization properties.…
MOVPE Growth of Smooth and Homogeneous Al0.8Ga0.2N:Si Superlattices as UVC Laser Cladding Layers
/forschung/publikationen/movpe-growth-of-smooth-and-homogeneous-al08ga02nsi-superlattices-as-uvc-laser-cladding-layers
Smooth, uniform and conductive AlxGa1-xN layers with high aluminum mole fractions of x > 0.7 are required as cladding layers for laser diodes emitting in the deep ultraviolet spectral…