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Traveling-wave simulations of broad-area lasers
/forschung/publikationen/traveling-wave-simulations-of-broad-area-lasers
We present a physics-based tool for the numerical simulation of high-power broad-area edge-emitting diode lasers that self consistently couples heat transport to a dynamic electro-optical model. Due…
Coherent beam combining of tapered amplifiers unde QCW regime
/forschung/publikationen/coherent-beam-combining-of-tapered-amplifiers-unde-qcw-regime
We demonstrate the coherent beam combining of four high-brightness tapered amplifiers in quasi continuous wave operation. A maximum combined power of 22.7 W was achieved with > 64%…
High pulse power wavelength stabilized 905 nm laser bars for automotive LiDAR
/forschung/publikationen/high-pulse-power-wavelength-stabilized-905nbspnm-laser-bars-for-automotive-lidar
Key components of LiDAR (Light Detection and Ranging) systems, e.g., for autonomous driving and robotics are diode lasers capable of generating nanoseconds-long optical pulses with peak powers of…
Nanometrology: Absolute Seebeck coefficient of individual silver nanowires
/forschung/publikationen/nanometrology-absolute-seebeck-coefficient-of-individual-silver-nanowires
Thermoelectric phenomena can be strongly modified in nanomaterials. The determination of the absolute Seebeck coefficient is a major challenge for metrology with respect to micro- and nanostructures…
Shifted Excitation Raman Difference Spectroscopy with Charge-Shifting Charge-Coupled Device (CCD) Lock-In Detection
/forschung/publikationen/shifted-excitation-raman-difference-spectroscopy-with-charge-shifting-charge-coupled-device-ccd-lock-in-detection
Shifted excitation Raman difference spectroscopy (SERDS) can provide effective, chemically specific information on fluorescent samples. However, the restricted ability for fast alternating detection…
Performance Analysis of a Low-Noise, Highly Linear Distributed Amplifier in 500-nm InP/InGaAs DHBT Technology
/forschung/publikationen/performance-analysis-of-a-low-noise-highly-linear-distributed-amplifier-in-500-nm-inpingaas-dhbt-technology
This article is an extension of the previous report on an ultrawideband distributed amplifier (DA) in the InP double heterojunction bipolar transistor (DHBT) technology. With the choice of a tricode…
Determination of Sapphire Off-Cut and Its Influence on the Morphology and Local Defect Distribution in Epitaxially Laterally Overgrown AlN for Optically Pumped UVC Lasers
/forschung/publikationen/determination-of-sapphire-off-cut-and-its-influence-on-the-morphology-and-local-defect-distribution-in-epitaxially-laterally-overgrown-aln-for-optically-pumped-uvc-lasers
Herein, a systematic study of the morphology and local defect distribution in epitaxially laterally overgrown (ELO) AlN on c-plane sapphire substrates with different off-cut angles ranging from…
A single-laser alternating-frequency magneto-optical trap
/forschung/publikationen/a-single-laser-alternating-frequency-magneto-optical-trap
In this paper, we present a technique for magneto-optical cooling and trapping of neutral atoms using a single laser. The alternating-frequency magneto-optical trap (AF-MOT) uses an agile light…
Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes
/forschung/publikationen/effect-of-quantum-barrier-composition-on-electro-optical-properties-of-algan-based-uvc-light-emitting-diodes
The height of the barrier around the AlGaN quantum well has a strong impact on the external quantum efficiency of UVC light emitting diodes (LEDs) as it affects the carrier confinement, the…
Displacement Talbot lithography for nano-engineering of III-nitride materials
/forschung/publikationen/displacement-talbot-lithography-for-nano-engineering-of-iii-nitride-materials
Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography…