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Hole injection mechanism in the quantum wells of blue light emitting diode with V pits for micro-display application

/forschung/publikationen/hole-injection-mechanism-in-the-quantum-wells-of-blue-light-emitting-diode-with-v-pits-for-micro-display-application

The current injection mechanisms for blue light emitting diodes (LEDs) with and without V pits were examined by controlling the bandgaps of InGaN quantum wells (QWs), which were changed by reducing…

Nitride Semiconductors

/forschung/publikationen/nitride-semiconductors

The III-nitrides have successfully made their way into a number of economically important fields, both in electronics and optoelectronics. This chapter first discusses the important properties of the…

High-power laser diodes for direct applications and laser pumping

/forschung/publikationen/high-power-laser-diodes-for-direct-applications-and-laser-pumping

This chapter focuses primarily on progress in HPDLS that are grown on GaAs substrates and emit in the operating wavelength range λop = 900... 1000 nm, where the highest…

Progress in Efficiency and Brightness in GaAs-Based High Power Diode Lasers

/forschung/publikationen/progress-in-efficiency-and-brightness-in-gaas-based-high-power-diode-lasers

Continuous improvement is required in the properties of GaAs-based high power diode lasers, to support the needs of the rapidly growing material processing market, amongst others. A brief overview is…

Monolithic Master Oscillator Tilted Tapered Power Amplifier Emitting 9.5 W at 1060 nm

/forschung/publikationen/monolithic-master-oscillator-tilted-tapered-power-amplifier-emitting-95nbspw-at-1060nbspnm

In this work, we present the design and performance of a monolithic master oscillator tilted tapered power amplifier emitting at 1060 nm. The device consists of three sections: a 2 mm long…

Micro-integrated high-power narrow-linewidth external-cavity tapered diode laser at 808 nm

/forschung/publikationen/micro-integrated-high-power-narrow-linewidth-external-cavity-tapered-diode-laser-at-808nbspnm

A novel compact micro-integrated high-power narrow-linewidth external-cavity diode laser around 808 nm is demonstrated. The laser system contains a tapered amplifier consisting of a…

Extended cavity diode laser master-oscillator-power-amplifier for operation of an iodine frequency reference on a sounding rocket

/forschung/publikationen/extended-cavity-diode-laser-master-oscillator-power-amplifier-for-operation-of-an-iodine-frequency-reference-on-a-sounding-rocket

We present a hybrid microintegrated diode laser module developed for iodine spectroscopy on board a sounding rocket. The laser module is based on a master-oscillator-power-amplifier concept: an…

AlN overgrowth of nano-pillar-patterned sapphire with different offcut angle by metalorganic vapor phase epitaxy

/forschung/publikationen/aln-overgrowth-of-nano-pillar-patterned-sapphire-with-different-offcut-angle-by-metalorganic-vapor-phase-epitaxy

We present overgrowth of nano-patterned sapphire with different offcut angles by metalorganic vapor phase epitaxy. Hexagonal arrays of nano-pillars were prepared via Displacement Talbot Lithography…

Mode-locked diode laser-based two-photon polymerisation

/forschung/publikationen/mode-locked-diode-laser-based-two-photon-polymerisation

In this Letter, the authors present the construction of three-dimensional microstructures by two-photon polymerisation induced by ultrashort pulses of a mode-locked diode laser. The ultrafast light…

Versatile high power pulse-laser source for pico- and nanosecond optical pulses

/forschung/publikationen/versatile-high-power-pulse-laser-source-for-pico-and-nanosecond-optical-pulses

This paper presents a pulse-laser source for the generation of ps and ns laser pulses with more than 50 W peak output power. The final stages of the drivers use GaN transistors and are capable…