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Analysis of waveguide architectures of InGaN/GaN diode lasers by nearfield optical microscopy
/forschung/publikationen/analysis-of-waveguide-architectures-of-ingangan-diode-lasers-by-nearfield-optical-microscopy
Waveguide (WG) architectures of 420-nm emitting InAlGaN/GaN diode lasers are analyzed by photoluminescence (PL) and photocurrent (PC) spectroscopy using a nearfield scanning optical microscope (NSOM)…
1030-nm diode-laser-based light source delivering pulses with nanojoule energies and picosecond duration adjustable by mode locking or pulse gating operation
/forschung/publikationen/1030-nm-diode-laser-based-light-source-delivering-pulses-with-nanojoule-energies-and-picosecond-duration-adjustable-by-mode-locking-or-pulse-gating-operation
A new compact 1030 nm picosecond light source which can be switched between pulse gating and mode locking operation is presented. It consists of a multi-section distributed Bragg reflector (DBR)…
785 nm dual-wavelength Y-branch DBR-RW diode laser with electrically adjustable wavelength distance between 0 nm and 2 nm
/forschung/publikationen/785-nm-dual-wavelength-y-branch-dbr-rw-diode-laser-with-electrically-adjustable-wavelength-distance-between-0-nm-and-2-nm
785 nm dual-wavelength Y-branch DBR-RW diode laser with electrically adjustable wavelength distance between 0 nm and 2 nm B. Sumpf, J. Kabitzke, J. Fricke, P. Ressel,…
Monolithic dual-wavelength diode lasers with sub-MHz narrowband emission at 785 nm
/forschung/publikationen/monolithic-dual-wavelength-diode-lasers-with-sub-mhz-narrowband-emission-at-785-nm
A dual-wavelength diode laser with sub-MHz narrowband emission at 785 nm is presented. The device is investigated for both emission lines up to an optical power of 150 mW. A stable spectral…
1030 nm DBR tapered diode laser with up to 16 W of optical output power
/forschung/publikationen/1030-nm-dbr-tapered-diode-laser-with-up-to-16-w-of-optical-output-power
A 1030 nm distributed Bragg reflector (DBR) tapered diode laser with optimized vertical layer structure and lateral design is presented. At a heatsink temperature of 15°C the developed laser provides…
Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation
/forschung/publikationen/defect-generation-in-deep-uv-algan-based-leds-investigated-by-electrical-and-spectroscopic-characterisation
AlGaN-based UV-B LEDs are promising candidates to replace conventional ultraviolet sources, thanks to their low operation voltage and to the possibility of tuning the emission wavelength by changing…
In-situ metrology in multiwafer reactors during MOVPE of AIN-based UV-LEDs
/forschung/publikationen/in-situ-metrology-in-multiwafer-reactors-during-movpe-of-ain-based-uv-leds
UV-LEDs are of great interest for applications like disinfection, gas sensing, and phototherapy. The cost sensitive LEDs are commonly grown by MOVPE on transparent AlN/sapphire templates. The large…
Miniaturized Lab System for Future Cold Atom Experiments in Microgravity
/forschung/publikationen/miniaturized-lab-system-for-future-cold-atom-experiments-in-microgravity
We present the technical realization of a compact system for performing experiments with cold 87Rb and 39K atoms in microgravity in the future. The whole system fits into a capsule to be used in the…
Monolithically wavelength-stabilized high power diode lasers
/forschung/publikationen/monolithically-wavelength-stabilized-high-power-diode-lasers
GaAs-based diode lasers that deliver high powers at high efficiencies within a narrow, stable spectral window are in strong demand for applications including solid state laser pumping and direct…
Growth and optical properties of GaN-based non- and semipolar LEDs
/forschung/publikationen/growth-and-optical-properties-of-gan-based-non-and-semipolar-leds
The development of smooth (0001) GaN films on c-plane sapphire [1] and the activation of p-dopants in GaN [2] led very quickly to the realization of high brightness InGaN LEDs on c-plane sapphire…