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Local 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology
/forschung/publikationen/local-2deg-density-control-in-heterostructures-of-piezoelectric-materials-and-its-application-in-gan-hemt-fabrication-technology
This paper investigates the local control of two dimensional electron gas (2DEG) density in AlGaN/GaN heterostructures by applying external mechanical stress. The proposed 2DEG tuning mechanism…
Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ∼ 0.53 THz
/forschung/publikationen/transferred-substrate-inpgaassb-heterojunction-bipolar-transistor-technology-with-fmaxnbspsimnbsp053nbspthz
We report on the realization of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-µm-wide…
Gate Control Scheme of Monolithically Integrated Normally OFF Bidirectional 600-V GaN HFETs
/forschung/publikationen/gate-control-scheme-of-monolithically-integrated-normally-off-bidirectional-600-v-gan-hfets
The design and gate-control management of monolithically integrated bidirectional normally OFF GaN-HFET-based switches are presented. Unidirectional 600-V p-GaN-gate HFETs are converted into…
Degradation behavior of AlGaN-based 233nm deep-ultraviolet light emitting diodes
/forschung/publikationen/degradation-behavior-of-algan-based-233nm-deep-ultraviolet-light-emitting-diodes
The degradation behavior of AlGaN multiple-quantum well (MQW) deep-ultraviolet light emitting diodes emitting near 233 nm stressed at a constant current of 100 mA over 1000 h of…
Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics
/forschung/publikationen/influence-of-waveguide-strain-and-surface-morphology-on-algan-based-deep-uv-laser-characteristics
The waveguide strain and the surface morphologies of AlGaN-based laser heterostructures emitting in the deep UV spectral range have been investigated. In particular, the impact of the AlGaN…
Shifted excitation resonance Raman difference spectroscopy system suitable for the quantitative in vivo detection of carotenoids in human skin
/forschung/publikationen/shifted-excitation-resonance-raman-difference-spectroscopy-system-suitable-for-the-quantitative-in-vivo-detection-of-carotenoids-in-human-skin
A system for shifted excitation resonance Raman spectroscopy (SERRDS) suitable for the application in medical practice for the in vivo detection of carotenoids in human skin is presented. This system…
Near Infrared Diode Laser THz Systems
/forschung/publikationen/near-infrared-diode-laser-thz-systems
The generation and detection of radiation in the THz frequency range can be achieved with many different electronic and photonic concepts. Among the many different photonic THz systems the most…
Investigation of red-emitting distributed Bragg reflector lasers by means of numerical simulations
/forschung/publikationen/investigation-of-red-emitting-distributed-bragg-reflector-lasers-by-means-of-numerical-simulations
The authors report theoretical and experimental results on the properties of distributed Bragg reflector semiconductor lasers. Using the traveling wave equation model, they show that a proper choice…
Efficient iron doping of HVPE GaN
/forschung/publikationen/efficient-iron-doping-of-hvpe-gan
Thick freestanding iron-doped semi-insulating GaN layers were grown by Hydride Vapor Phase Epitaxy on GaN/sapphire templates. Iron doping was achieved by using Fe57-enriched Fe2O3 reduced to…
Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning
/forschung/publikationen/bow-reduction-of-alingan-based-deep-uv-led-wafers-using-focused-laser-patterning
We investigated the effect of bow reduction of AlInGaN-based deep-ultraviolet light-emitting diode (DUV LED) wafers using internally focused laser patterning. The laser-induced stress inside of the…