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Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs
/forschung/publikationen/metamorphic-al05ga05nsi-on-alnsapphire-for-the-growth-of-uvb-leds
In this paper we investigate the growth of metamorphic Al0.5Ga0.5N:Si on c-plane AlN/sapphire. The structural properties of the AlGaN:Si pseudo substrates and the electro-optical characteristics of…
Electro-optical characteristics of 808nm ridge-waveguide lasers operated with high-current nanosecond pulses
/forschung/publikationen/electro-optical-characteristics-of-808nm-ridge-waveguide-lasers-operated-with-high-current-nanosecond-pulses
The aim of this paper is to present detailed experimental and theoretical investigations of the behavior of ridge-waveguide (RW) lasers emitting at 808 nm under injection of 3 ns long…
Numerical study of high-power semiconductor lasers for operation at subzero temperatures
/forschung/publikationen/numerical-study-of-high-power-semiconductor-lasers-for-operation-at-subzero-temperatures
We present results on the impact of the Al-content in the waveguide structure on the electrooptical characteristics of 9xx nm, GaAs-based high-power lasers operated at room (300 K) and at sub-zero…
Optically Pumped DFB Lasers Based on GaN Using 10th-Order Laterally Coupled Surface Gratings
/forschung/publikationen/optically-pumped-dfb-lasers-based-on-gan-using-10th-order-laterally-coupled-surface-gratings
An optically pumped GaN-based laser structure with 10th-order laterally coupled surface grating is demonstrated. The fabrication involved i-line photolithography and dry etching, avoiding more…
Instabilities and Bifurcations of a DFB Laser Frequency-Stabilized by a High-Finesse Resonator
/forschung/publikationen/instabilities-and-bifurcations-of-a-dfb-laser-frequency-stabilized-by-a-high-finesse-resonator
Recently reported miniature configurations with semiconductor distributed feedback lasers under resonant feedback are considered theoretically. Limiting instabilities and bifurcations are…
Defect-Related Degradation of AlGaN-Based UV-B LEDs
/forschung/publikationen/defect-related-degradation-of-algan-based-uv-b-leds
This paper describes an extensive analysis of the degradation of (InAlGa)N-based UV-B light-emitting diodes (LEDs) submitted to constant current stress. This paper is based on combined electrical…
Silicon induced defect reduction in AlN template layers for epitaxial lateral overgrowth
/forschung/publikationen/silicon-induced-defect-reduction-in-aln-template-layers-for-epitaxial-lateral-overgrowth
The effect of Si doping on defect density in AlN layers grown on sapphire was analysed. Si concentration in the range of 1019cm-3 leads to dislocation line inclination in AlN layers with a threading…
Gas Sensing of Nitrogen Oxide Utilizing Spectrally Pure Deep UV LEDs
/forschung/publikationen/gas-sensing-of-nitrogen-oxide-utilizing-spectrally-pure-deep-uv-leds
In this paper, we will present the development of a compact LED-based optical gas sensing system in the ultraviolet-C spectral region. This includes the design of the LED heterostruc- ture emitting…
The Digital Power Amplifier for the Wireless Infrastructure: Status and Prospects
/forschung/publikationen/the-digital-power-amplifier-for-the-wireless-infrastructure-status-and-prospects
In digital power amplifiers the analog signal is not handled directly but encoded in a pulse train. It is restored only at the output by a bandpass filter. Due to the discretization in amplitude,…
Method for in-depth characterization of electro-optic phase modulators
/forschung/publikationen/method-for-in-depth-characterization-of-electro-optic-phase-modulators
A flexible method to measure the modulation efficiency and residual amplitude modulation, including nonlinearities, of phase modulators is presented. The method is based on demodulation of the…