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Influence of Microwave Probes on Calibrated On-Wafer Measurements
/forschung/publikationen/influence-of-microwave-probes-on-calibrated-on-wafer-measurements
On-wafer probing with ground-signal-ground (GSG) probes contributes a variety of side effects, which are related to the measured line type, the carrier material, the layout with the neighboring…
Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability
/forschung/publikationen/time-resolved-photoluminescence-from-n-doped-ganal018ga082n-short-period-superlattices-probes-carrier-kinetics-and-long-term-structural-stability
Heavily n-doped GaN/Al0.18Ga0.82N short-period superlattices with and without SiN protection layers are studied in spectrally and temporally resolved photoluminescence (PL) experiments. The…
Power Amplifier Supply Modulators
/forschung/publikationen/power-amplifier-supply-modulators
RF power amplifiers (PAs) are used in mobile communication networks for the amplification of the modulated RF signals. Linear RF PAs suffer from severe efficiency degradation if the output power is…
Optical Quantum Technologies for Compact Rubidium Vapor-cell Frequency Standards in Space Using Small Satellites
/forschung/publikationen/optical-quantum-technologies-for-compact-rubidium-vapor-cell-frequency-standards-in-space-using-small-satellites
As part of the phase 0/A of the QUEEN mission, we evaluated our payload and satellite platform heritage and studied feasible mission scenarios for demonstrating optical frequency references aboard…
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
/forschung/publikationen/the-emergence-and-prospects-of-deep-ultraviolet-light-emitting-diode-technologies
By alloying GaN with AlN the emission of AlGaN light-emitting diodes can be tuned to cover almost the entire ultraviolet spectral range (210-400 nm), making ultraviolet light-emitting diodes…
Terahertz emission from biased AlGaN/GaN high-electron-mobility transistors
/forschung/publikationen/terahertz-emission-from-biased-algangan-high-electron-mobility-transistors
We report on the results of a comprehensive study of THz emission from a set of dedicated AlGaN/GaN high-electron-mobility transistors. We find that voltage-biased transistors indeed emit in the THz…
Optical light polarization and light extraction efficiency of AlGaN-based LEDs emitting between 264 and 220nm
/forschung/publikationen/optical-light-polarization-and-light-extraction-efficiency-of-algan-based-leds-emitting-between-264-and-220nm
The influence of aluminum mole fraction of AlxGa1-xN/AlyGa1-yN multiple quantum wells (MQWs) on the optical polarization, light extraction efficiency (LEE) and external quantum efficiency (EQE) of…
Degradation of AlGaN-based metal-semiconductor-metal photodetectors
/forschung/publikationen/degradation-of-algan-based-metal-semiconductor-metal-photodetectors
The degradation of AlGaN-based metal-semiconductor-metal photodetectors under UV illumination has been studied. Oxidation triggered by the presence of moisture and mobile carriers at the…
High power UVB light emitting diodes with optimized n-AlGaN contact layers
/forschung/publikationen/high-power-uvb-light-emitting-diodes-with-optimized-n-algan-contact-layers
The influence of the n-AlGaN contact layer thickness and doping profile on the efficiency, operating voltage and lifetime of 310 nm LEDs has been investigated. Increasing the n-contact layer…
Impact of intermediate high temperature annealing on the properties of AlN/sapphire templates grown by metalorganic vapor phase epitaxy
/forschung/publikationen/impact-of-intermediate-high-temperature-annealing-on-the-properties-of-alnsapphire-templates-grown-by-metalorganic-vapor-phase-epitaxy
In this work, we investigate AlN/sapphire templates grown by metalorganic vapor phase epitaxy (MOVPE) subjected to an intermediate high temperature annealing (HTA) step at different AlN film…