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An Active High Conversion Gain W-Band Up-Converting Mixer for Space Applications
/forschung/publikationen/an-active-high-conversion-gain-w-band-up-converting-mixer-for-space-applications
This paper presents an active W-band up-converting double-balanced Gilbert mixer realized in 800 nm transferred substrate (TS) InP-DHBT technology. It consists of an active balun and a frequency…
Impact of Drain-Lag Induced Current Degradation for a Dynamically Operated GaN-HEMT Power Amplifier
/forschung/publikationen/impact-of-drain-lag-induced-current-degradation-for-a-dynamically-operated-gan-hemt-power-amplifier
In this paper, the impact of charge trapping effects in a GaN-HEMT power amplifier is analyzed and quantified, using a low complexity model for drain-lag effects. The peak drain-source voltage under…
Improving Wafer-Level Calibration Consistency with TMRR Calibration Method
/forschung/publikationen/improving-wafer-level-calibration-consistency-with-tmrr-calibration-method
This paper presents the new calibration algorithm TMRR (Thru-Match-Reflect-Reflect), the extension of the Thru-Match-Reflect (TMR) method with one extra Reflect standard. The algorithm was developed…
On the Importance of Calibration Standards Definitions for On-Wafer Measurements up to 110 GHz
/forschung/publikationen/on-the-importance-of-calibration-standards-definitions-for-on-wafer-measurements-up-to-110nbspghz
This paper reports on the follow-up evaluation of an on-wafer measurement comparison on custom-made and conventional alumina calibration substrates in the frequency range up to 110 GHz. The…
Wideband Dynamic Drain Current Measurements with a Galvanically Isolated Probe Targeting Supply-Modulated RF Power Amplifiers for 5G Infrastructure
/forschung/publikationen/wideband-dynamic-drain-current-measurements-with-a-galvanically-isolated-probe-targeting-supply-modulated-rf-power-amplifiers-for-5g-infrastructure
Supply modulation of RF power amplifiers (PA) is a powerful efficiency enhancement technique. For optimization of the RF PA and the supply modulator the dynamic low frequency drain current is of high…
Effect of the GaN:Mg Contact Layer on the Light-Output and Current-Voltage Characteristic of UVB LEDs
/forschung/publikationen/effect-of-the-ganmg-contact-layer-on-the-light-output-and-current-voltage-characteristic-of-uvb-leds
In order to realize UVB LEDs with high wall-plug efficiencies, the light extraction efficiency from the LED heterostructure must be maximized and operating voltages reduced. In this study, we…
GaN-Based Vertical n-Channel MISFETs on Free Standing Ammonothermal GaN Substrates
/forschung/publikationen/gan-based-vertical-n-channel-misfets-on-free-standing-ammonothermal-gan-substrates
In this work, a vertical n-channel MISFET homoepitaxially grown on ammonothermal n-type GaN substrates by MOVPE is demonstrated. The MIS gate module consists of plasma enhanced atomic layer…
Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power
/forschung/publikationen/spectral-linewidth-vs-front-facet-reflectivity-of-780nbspnm-dfb-diode-lasers-at-high-optical-output-power
The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and…
Future technology trends
/forschung/publikationen/future-technology-trends
Future technology trends L. Lorenz1, T. Erlbacher2, O. Hilt3 Keywords: Silicon carbide transistors; Gallium nitride transistors; Power devices; WBG semiconductor technology;…
Reduction of absorption losses in MOVPE-grown AlGaAs Bragg mirrors
/forschung/publikationen/reduction-of-absorption-losses-in-movpe-grown-algaas-bragg-mirrors
Residual p-type doping from carbon has been identified as the root cause of excess absorption losses in (Al)GaAs/ AlGaAs Bragg mirrors for high-finesse optical cavities when grown by metalorganic…