Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
Narrow linewidth diode laser modules for quantum optical sensor applications in the field and in space
/forschung/publikationen/narrow-linewidth-diode-laser-modules-for-quantum-optical-sensor-applications-in-the-field-and-in-space
We present the status of our efforts to develop very compact and robust diode laser modules specifically suited for quantum optics experiments in the field and in space. The paper describes why…
kW-class Diode Laser Bars
/forschung/publikationen/kw-class-diode-laser-bars
Progress will be presented on ongoing research into the development of ultra-high power and efficiency bars achieving significantly higher output power, conversion efficiency and brightness than…
Progress in joule-class diode laser bars and high brightness modules for application in long-pulse pumping of solid state amplifiers
/forschung/publikationen/progress-in-joule-class-diode-laser-bars-and-high-brightness-modules-for-application-in-long-pulse-pumping-of-solid-state-amplifiers
Progress in the development of highly brilliant pump modules based on novel high-energy-class diode laser bars is presented, targeting long-pulse (2 ms) application in pumping Yb:CaF2 amplifier…
Miniaturized laser amplifier modules for wavelengths of 1180 nm with PM-fiber input and more than 1 W optical output power
/forschung/publikationen/miniaturized-laser-amplifier-modules-for-wavelengths-of-1180-nm-with-pm-fiber-input-and-more-than-1-w-optical-output-power
In this paper a micro-integrated laser-amplifier for a wavelength of 1180nm is presented. The modules can amplify laser emission from any source, which is coupled into the polarization-maintaining…
Coherent beam combining architectures for high power tapered laser arrays
/forschung/publikationen/coherent-beam-combining-architectures-for-high-power-tapered-laser-arrays
Coherent beam combining (CBC) aims at increasing the spatial brightness of lasers. It consists in maintaining a constant phase relationship between different emitters, in order to combine them…
Non-Uniform DFB-Surface-Etched Gratings for Enhanced Performance High Power, High Brightness Broad Area Lasers
/forschung/publikationen/non-uniform-dfb-surface-etched-gratings-for-enhanced-performance-high-power-high-brightness-broad-area-lasers
Monolithic spectral stabilization is demonstrated in narrow-stripe broad-area lasers (NBA) with high power (5W), conversion efficiency (50%) and high brightness, by using optimized high-order…
3.5 W of diffraction-limited green light at 515 nm from SHG of a single-frequency tapered diode laser
/forschung/publikationen/35-w-of-diffraction-limited-green-light-at-515-nm-from-shg-of-a-single-frequency-tapered-diode-laser
Multi-Watt efficient compact green laser sources are required for a number of applications e.g. within biophotonics, laser pumping and laser displays. We present generation of 3.5 W of…
Picosecond pulsed micro-module emitting near 560 nm using a frequency doubled gain-switched DBR ridge waveguide semiconductor laser
/forschung/publikationen/picosecond-pulsed-micro-module-emitting-near-560-nm-using-a-frequency-doubled-gain-switched-dbr-ridge-waveguide-semiconductor-laser
A miniaturized picosecond pulsed semiconductor laser source in the spectral range around 560nm is realized by integrating a frequency doubled distributed Bragg reflector ridge waveguide laser…
633 nm single-mode laser-diode module with PM fiber output
/forschung/publikationen/633-nm-single-mode-laser-diode-module-with-pm-fiber-output
Several holographic and interferometric applications would benefit significantly from a diode laser based coherent light source near 633 nm. For this purpose a laser diode based on an…
AlGaN-based metal-semiconductor-metal photodetectors with high external quantum effciency at low operating voltage
/forschung/publikationen/algan-based-metal-semiconductor-metal-photodetectors-with-high-external-quantum-effciency-at-low-operating-voltage
Solar blind Al0.5Ga0.5N/AlN metal-semiconductor-metal photodetectors (MSM PDs) are characterized by means of photocurrent spectroscopy. In order to enhance the external quantum efficiency (EQE) at…