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Autonomous frequency stabilization of two extended-cavity diode lasers at the potassium wavelength on a sounding rocket
/forschung/publikationen/autonomous-frequency-stabilization-of-two-extended-cavity-diode-lasers-at-the-potassium-wavelength-on-a-sounding-rocket
We have developed, assembled, and flight-proven a stable, compact, and autonomous extended-cavity diode laser (ECDL) system designed for atomic physics experiments in space. To that end, two…
On Distortion in Digital Microwave Power Amplifiers
/forschung/publikationen/on-distortion-in-digital-microwave-power-amplifiers
In this paper, a first study of distortion in digital power amplifiers (PA) is presented. The work is based on a voltage mode class-S PA with a GaN MMIC for the 900 MHz frequency band. The…
Tight Focus Toward the Future: Tight Material Combination for Millimeter-Wave RF Power Applications: InP HBT SiGe BiCMOS Heterogeneous Wafer-Level Integration
/forschung/publikationen/tight-focus-toward-the-future-tight-material-combination-for-millimeter-wave-rf-power-applications-inp-hbt-sige-bicmos-heterogeneous-wafer-level-integration
The push to conquer the sparsely used electromagnetic spectrum between 100 and 1,000 GHz, commonly known as the millimeter-wave (mmW) and sub-mmW regions, is now in full force. The current rapid…
Efficient generation of 3.5 W laser light at 515 nm by frequency doubling a single-frequency high power DBR tapered diode laser
/forschung/publikationen/efficient-generation-of-35-w-laser-light-at-515-nm-by-frequency-doubling-a-single-frequency-high-power-dbr-tapered-diode-laser
More than 3.5 W of green light at 515 nm is generated by frequency doubling a single-frequency high power DBR tapered diode laser. The frequency doubling is performed in a cascade of PPMgLN…
The effects of magnesium doping on the modal loss in AlGaN-based deep UV lasers
/forschung/publikationen/the-effects-of-magnesium-doping-on-the-modal-loss-in-algan-based-deep-uv-lasers
Absorption losses in the Mg-doped layers significantly contribute to the modal losses in group-III-nitride-based lasers. In this paper, we investigate the influence of Mg-doping on the modal…
Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy
/forschung/publikationen/analysis-of-doping-concentration-and-composition-in-wide-bandgap-algansi-by-wavelength-dispersive-x-ray-spectroscopy
Detailed knowledge of the dopant concentration and composition of wide band gap AlxGa1-xN layers is of crucial importance for the fabrication of ultra violet light emitting diodes. This paper…
In-situ shifted excitation Raman difference spectroscopy: development and demonstration of a portable sensor system at 785 nm
/forschung/publikationen/in-situ-shifted-excitation-raman-difference-spectroscopy-development-and-demonstration-of-a-portable-sensor-system-at-785-nm
In-situ shifted excitation Raman difference spectroscopy (SERDS) experiments are presented using a portable sensor system. Key elements of this system are an in-house developed handheld probe with an…
Compact single-mode diode laser in the visible spectral range
/forschung/publikationen/compact-single-mode-diode-laser-in-the-visible-spectral-range
This work reports on a compact single-mode diode laser emitting at 633 nm based on an AlGaAs/AlGaInP structure with an integrated DBR surface grating. The micro-fabricated diode laser package…
Assessment of factors regulating the thermal lens profile and lateral brightness in high power diode lasers
/forschung/publikationen/assessment-of-factors-regulating-the-thermal-lens-profile-and-lateral-brightness-in-high-power-diode-lasers
The lateral beam parameter product, BPPlat, and resulting lateral brightness of GaAs-based high-power broad-area diode lasers is strongly influenced by the thermal lens profile. We present latest…
Compact diode laser module at 1116 nm with an integrated optical isolation and a PM-SMF output
/forschung/publikationen/compact-diode-laser-module-at-1116-nm-with-an-integrated-optical-isolation-and-a-pm-smf-output
In this work, a fiber-coupled diode laser module emitting around 1116 nm with an output power P < 60 mW is realized. As a laser light source a distributed Bragg reflector (DBR)…