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A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements
/forschung/publikationen/a-streamlined-drain-lag-model-for-gan-hemts-based-on-pulsed-s-parameter-measurements
Accurately and efficiently modeling the drain-lag effects is crucial in nonlinear large-signal modeling for Gallium Nitride high electron mobility transistors. In this paper, a simplified yet…
Influence of silicon doping on internal quantum efficiency and threshold of optically pumped deep UV AlGaN quantum well lasers
/forschung/publikationen/influence-of-silicon-doping-on-internal-quantum-efficiency-and-threshold-of-optically-pumped-deep-uv-algan-quantum-well-lasers
The influence of silicon doping on optically pumped AlGaN quantum well (QW) lasers has been analyzed. Either the QWs, quantum barriers, or the whole heterostructure were doped with Si concentrations…
Improving the spectral performance of extended cavity diode lasers using angled-facet laser diode chips
/forschung/publikationen/improving-the-spectral-performance-of-extended-cavity-diode-lasers-using-angled-facet-laser-diode-chips
We present and compare theoretical and experimental results on the electro-optical performance of extended cavity diode lasers (ECDLs) that employ two ridge waveguide designs for the…
Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN
/forschung/publikationen/crystal-defect-analysis-in-aln-layers-grown-by-movpe-on-bulk-aln
MOVPE growth of AlN layers on bulk AlN substrates with low threading dislocation density (< 105 cm-2) can result in enhanced defect formation. Chemo-mechanical polishing (CMP) of bulk…
Efficient Tm:YAG and Tm:LuAG lasers pumped by 681 nm tapered diodes
/forschung/publikationen/efficient-tmyag-and-tmluag-lasers-pumped-by-681nbspnm-tapered-diodes
In this paper, we present highly efficient continuous-wave (cw) laser operation of Tm:YAG and Tm:LuAG lasers pumped by high-brightness red tapered diodes. The single-emitter tapered diode lasers…
Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment
/forschung/publikationen/simulation-of-the-rf-power-performance-of-a-gan-hfet-and-comparison-to-experiment
The large-signal RF power performance of an AlGaN/GaN heterostructure field-effect transistor (HFET) is simulated by technology computer-aided design (TCAD) software, and compared to measurement. A…
MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs
/forschung/publikationen/movpe-grown-algan-based-tunnel-heterojunctions-enabling-fully-transparent-uvc-leds
We report on AlGaN-based tunnel heterojunctions grown by metalorganic vapor phase epitaxy enabling fully transparent UVC LEDs by eliminating the absorbing p-AlGaN and p-GaN layers. Furthermore, the…
On-chip integration of single solid-state quantum emitters with a SiO2 photonic platform
/forschung/publikationen/on-chip-integration-of-single-solid-state-quantum-emitters-with-a-sio2-photonic-platform
One important building block for future integrated nanophotonic devices is the scalable on-chip interfacing of single photon emitters and quantum memories with single optical modes. Here we present…
Crosstalk Effects of Differential Thin-Film Microstrip Lines in Multilayer Motherboards
/forschung/publikationen/crosstalk-effects-of-differential-thin-film-microstrip-lines-in-multilayer-motherboards
With increasing demand for miniaturization the requirements for packaging and system integration are more challenging especially when more and more components are to be integrated into a compact…
Class-G Supply Modulation for MIMO and Radar with Phased Array Antennas
/forschung/publikationen/class-g-supply-modulation-for-mimo-and-radar-with-phased-array-antennas
Class-G supply modulation, i.e., discrete level supply modulation, is a powerful efficiency enhancement technique. It allows wideband modulated operation of RF power amplifiers and high output power.…