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Using Physical Disorder to Fight Product Piracy and Secure Banknotes
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Using Physical Disorder to Fight Product Piracy and Secure Banknotes Dr. Ing. Ulrich RührmairRuhr-Universität Bochum
Chorafas-Preis an Neysha Lobo Ploch verliehen
/termine/chorafas-preis-an-neysha-lobo-ploch-verliehen
Für ihre Dissertation "Chip designs for high efficiency III-nitride based ultraviolet light emitting diodes with enhanced light extraction" wurde Frau Dr. Neysha Lobo Ploch kürzlich mit dem…
Quantitative Bestimmung von Matrix- und Verunreinigungs-Elementen in AlGaN mittels Sekundärionen-Massenspektrometrie (SIMS)
/forschung/forschungsnews/quantitative-bestimmung-von-matrix-und-verunreinigungs-elementen-in-algan-mittels-sekundaerionen-massenspektrometrie-sims
Das Materialsystem Aluminiumgalliumnitrid (AlGaN) wird zunehmend attraktiv für UV-basierte optoelektronische Bauelemente wie lichtemittierende Dioden (LED), Laserdioden und Fotodetektoren. Die…
Diode laser based deep ultraviolet Raman excitation
/forschung/forschungsnews/diode-laser-based-deep-ultraviolet-raman-excitation
One of the biggest challenges in Raman spectroscopy is to avoid or minimize the typically strong fluorescence background that can, in some cases, even mask the relatively weak Raman signal.
Highly Efficient High-Power G-band Frequency Multiplier in Transferred-Substrate InP DHBT Technology
/forschung/forschungsnews/highly-efficient-high-power-g-band-frequency-multiplier-in-transferred-substrate-inp-dhbt-technology
The frequency range between 100 GHz and 1 THz offers large bandwidth for high-speed communications as well as improved spatial resolution for radar sensors and imaging systems due to the short…
Wafer-level hetero-integrated InP DHBT/SiGe BiCMOS technology for mm-wave and sub-THz applications
/forschung/forschungsnews/wafer-level-hetero-integrated-inp-dhbtsige-bicmos-technology-for-mm-wave-and-sub-thz-applications
The mm-wave and sub-THz region from 100 to beyond 500 GHz holds many promises for emerging applications such as ultra-wideband wireless communications, high-resolution radar, spectroscopic sensing...
Mechanismen zur Erzeugung von Pikosekunden-Pulsen mit GaN-basierten Laserdioden
/forschung/forschungsnews/mechanismen-zur-erzeugung-von-pikosekunden-pulsen-mit-gan-basierten-laserdioden
Mechanismen zur Erzeugung von Pikosekunden-Pulsen mit GaN-basierten Laserdioden Prof. Dr. Ulrich T. SchwarzTU Chemnitz
A New Modulator for Digital RF Power Amplifiers Utilizing a Wave-Table Approach
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A New Modulator for Digital RF Power Amplifiers Utilizing a Wave-Table Approach Florian HühnFerdinand-Braun-Institut, Berlin
Can Class-G supply modulated systems replace power amplifiers in single-input, single-output systems?
/forschung/forschungsnews/can-class-g-supply-modulated-systems-replace-power-amplifiers-in-single-input-single-output-systems
Microwave power amplifiers (PA) are core components in modern communication systems. We present a first step towards a solution to replace linear PAs with highly efficient class-G supply modulated…
Photonic local oscillators for radio-astronomy in the terahertz range
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Photonic local oscillators for radio-astronomy in the terahertz range Iván Cámara MayorgaMax-Planck-Institut für Radioastronomie, Bonn