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Traceable Coplanar Waveguide Calibrations on Fused Silica Substrates up to 110 GHz
/forschung/publikationen/traceable-coplanar-waveguide-calibrations-on-fused-silica-substrates-up-to-110-ghz
In this paper, we present a comprehensive uncertainty budget for on-wafer S-parameter measurements of devices on a custom-built fused silica wafer, including instrumentation errors, connector…
Upconversion spectral response tailoring using fanout QPM structures
/forschung/publikationen/upconversion-spectral-response-tailoring-using-fanout-qpm-structures
In this Letter, a novel technique for independent control of the phase-matched center wavelength and bandwidth (BW) is demonstrated for upconversion detection in the 2-4 µm range using a…
Characterization and comparison between two coupling concepts of four-wavelength monolithic DBR ridge waveguide diode laser at 970 nm
/forschung/publikationen/characterization-and-comparison-between-two-coupling-concepts-of-four-wavelength-monolithic-dbr-ridge-waveguide-diode-laser-at-970-nm
Compact laser sources emitting at multiple wavelengths from a single aperture are interesting in a multiple of applications. In this work, we characterize and compare two concepts of four-arm…
Compact Diode Laser-Based Dual-Wavelength Master Oscillator Power Amplifier at 785 nm
/forschung/publikationen/compact-diode-laser-based-dual-wavelength-master-oscillator-power-amplifier-at-785nbspnm
A compact, micro integrated, diode laser-based dual-wavelength master oscillator power amplifier at 785 nm is presented. Laser emission from a Y-branch distributed Bragg reflector laser is…
Technology for D-band/G-band ultra capacity layer
/forschung/publikationen/technology-for-d-bandg-band-ultra-capacity-layer
The bands above 100 GHz offer outstanding potentiality for fixed wireless communications, matching the capacity requirements of future mobile networks backhaul in dense urban scenarios. However,…
Reconfigurable GaN Digital Tx Applying BST Bandpass Filter
/forschung/publikationen/reconfigurable-gan-digital-tx-applying-bst-bandpass-filter
The paper presents the first tunable GaN-based digital transmitter chain for 0.8-1.8 GHz range, suitable for MIMO systems in software-defined radio (SDR) installations. The demonstrator includes…
A Reconfigurable Modulator for Digital Outphasing Transmitters
/forschung/publikationen/a-reconfigurable-modulator-for-digital-outphasing-transmitters
This paper presents the next development stage of baseband-transparent modulators for digital microwave amplifiers. A modulator, used for encoding the baseband signal into a bitstream suitable for…
A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology
/forschung/publikationen/a-175-ghz-bandwidth-high-linearity-distributed-amplifier-in-500-nm-inp-dhbt-technology
This work reports a highly linear and efficient ultra-wideband distributed amplifier in 500 nm transferred-substrate InP DHBT technology. Five unit cells each with a tri-code transistor set…
Highly linear 90-170 GHz SPDT Switch with High Isolation for Fully Integrated InP Transceivers
/forschung/publikationen/highly-linear-90-170-ghz-spdt-switch-with-high-isolation-for-fully-integrated-inp-transceivers
This work reports a high-isolation SPDT switch realized in an 800-nm InP DHBT process. The circuit is based on shunt topology employing two cascaded shunt stages. This enhances the isolation while…
Thermally stable iridium contacts to highly doped p-In0:53Ga0:47As for indium phosphide double heterojunction bipolar transistors
/forschung/publikationen/thermally-stable-iridium-contacts-to-highly-doped-p-in053ga047as-for-indium-phosphide-double-heterojunction-bipolar-transistors
We report on surface pretreatment for ohmic contacts to p-doped In0.53Ga0.47As with improved thermal stability. It is found that the cleaning of In0.53Ga0.47As surface by ammonium sulfide or sulfuric…