Compound Semiconductor Week 2017
Auf der Compound Semiconductor Week ist das FBH an folgenden Vorträgen beteiligt:
- Understanding and controlling diameter widening during self-assisted growth of GaAs nanowires
- Development of AlGaN-based Deep UV LEDs for Nitrogen Oxide Sensing
- Separation of degradation effects in (AlGa)N-based UVB-LEDs
- Comparing electron beam lithography and nanoimprint lithography for the selective-area growth of GaAs nanowires by molecular beam epitaxy
- Integration of active, passive and buried-grating sections for a GaAs-based, widely tunable laser with sampled grating Bragg reflectors
- Wavelength stabilized high pulse power laser diodes for automotive LIDAR
- GaN based vertical n channel MISFETs for switching applications (Poster)
- Physical simulation of transferred substrate InP/InGaAs DHBT (Poster)
Besuchen Sie uns auch auf der begleitenden Ausstellung.