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Concept and numerical simulations of a widely tunable GaAs-based sampled-grating diode laser emitting at 976 nm
/forschung/publikationen/concept-and-numerical-simulations-of-a-widely-tunable-gaas-based-sampled-grating-diode-laser-emitting-at-976-nm
Tunable diode lasers are essential components in various optical systems. The authors present a concept and simulations of a four-section, widely tunable GaAs-based sampled-grating (SG)…
Terahertz frequency generation with monolithically integrated dual wavelength distributed Bragg reflector semiconductor laser diode
/forschung/publikationen/terahertz-frequency-generation-with-monolithically-integrated-dual-wavelength-distributed-bragg-reflector-semiconductor-laser-diode
Optoelectronic terahertz (THz) generation techniques have helped to narrow the THz gap and have opened up a wealth of new applications for THz technology. However, the development of THz systems into…
Highly Reflective p-Contacts Made of Pd-Al on Deep Ultraviolet Light-Emitting Diodes
/forschung/publikationen/highly-reflective-p-contacts-made-of-pd-al-on-deep-ultraviolet-light-emitting-diodes
Highly reflective metal contacts for the p-layers of AlGaN-based deep ultraviolet light emitting diodes (DUV LEDs) emitting at 305 nm have been investigated. Different Pd-Al metal stacks have…
Spectral Mode Hop Characteristics of Ridge Waveguide Lasers With Distributed Bragg-Reflector
/forschung/publikationen/spectral-mode-hop-characteristics-of-ridge-waveguide-lasers-with-distributed-bragg-reflector
In this letter, the mode hop characteristics of distributed Bragg-reflector ridge waveguide lasers emitting at 1120 nm with different resonator geometries and facet reflectivities are…
Compact High Power Diode Laser MOPA System With 5.5 nm Wavelength Tunability
/forschung/publikationen/compact-high-power-diode-laser-mopa-system-with-55-nm-wavelength-tunability
A hybrid master oscillator power amplifier (MOPA) diode laser with 6.2 W output power at 971.8 nm is presented. It consists of a distributed Bragg reflector (DBR) laser, which is collimated…
Polarization-Engineered n+GaN/InGaN/AlGaN/GaN Normally-Off MOS HEMTs
/forschung/publikationen/polarization-engineered-n-ganinganalgangan-normally-off-mos-hemts
The proposal, processing and performance of n+GaN/InGaN/AlGaN/GaN normally-off metal-oxide-semiconductor (MOS) HEMTs with a recessed 2-µm long gate/8-µm source-drain distance are…
Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
/forschung/publikationen/technology-and-reliability-of-normally-off-gan-hemts-with-p-type-gate
GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and…
Cross Conduction of GaN HFETs in Half-Bridge Converters
/forschung/publikationen/cross-conduction-of-gan-hfets-in-half-bridge-converters
Cross conduction in GaN HFETs is particularly critical due to the high dVDS/dt and small gatesource capacitances in conjunction with moderate drain-gate feed-back capacitances. Therefore, the…
High-power lasers
/forschung/publikationen/high-power-lasers
High-power lasers H. Wenzel, A. Zeghuzi Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Design of a compact diode laser system for dual-species atom interferometry with rubidium and potassium in space
/forschung/publikationen/design-of-a-compact-diode-laser-system-for-dual-species-atom-interferometry-with-rubidium-and-potassium-in-space
We report on a micro-integrated high power diode laser based system for the MAIUS II/III missions. The lasersystem features fiber coupled and frequency stabilized external cavity diode lasers (ECDL)…