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A High-Efficiency GaN Transistor Module with Thick-Film BST-Based Tunable Matching Network
/forschung/publikationen/a-high-efficiency-gan-transistor-module-with-thick-film-bst-based-tunable-matching-network
Thick-film barium-strontium-titanate varactors package-integrated with GaN HEMTs are high-efficiency and robust tunable devices that enable frequency agility and efficiency optimization. The tunable…
A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT Technology
/forschung/publikationen/a-highly-efficient-ultrawideband-traveling-wave-amplifier-in-inp-dhbt-technology
This letter presents a 1 to > 110-GHz ultrawideband traveling-wave amplifier (TWA) based on 500-nm transferred-substrate InP double-heterojunction bipolar transistor technology. The HBT cells…
Investigation of atomic layer deposition methods of Al2O3 on n-GaN
/forschung/publikationen/investigation-of-atomic-layer-deposition-methods-of-al2o3-on-n-gan
In this work, three atomic layer deposition (ALD) approaches are used to deposit an Al2O3 gate insulator on n-GaN for application in vertical GaN power switches: thermal ALD (ThALD), plasma-enhanced…
Compact Miniaturized Laser Module Emitting More Than 1.6 W of Yellow Light at 576 nm
/forschung/publikationen/compact-miniaturized-laser-module-emitting-more-than-16nbspw-of-yellow-light-at-576nbspnm
Laser light in the yellow-green spectral range has to rely on frequency conversion as suitable direct emitting laser diodes are not available yet. With the help of newly developed and highly…
Stress control of tensile-strained In1-xGaxP nanomechanical string resonators
/forschung/publikationen/stress-control-of-tensile-strained-in1-xgaxp-nanomechanical-string-resonators
We investigate the mechanical properties of freely suspended nanostrings fabricated from tensile-stressed, crystalline In1-xGaxP. The intrinsic strain arises during epitaxial growth as a consequence…
Accurate determination of polarization fields in (0 0 0 1) c-plane InAlN/GaN heterostructures with capacitance-voltage measurements
/forschung/publikationen/accurate-determination-of-polarization-fields-in-0-0-0-1-c-plane-inalngan-heterostructures-with-capacitance-voltage-measurements
In this paper the internal electric fields of nearly lattice matched InAlN/GaN heterostructures were determined. Pin-diodes containing InAlN/GaN heterostructures grown on (0001) sapphire substrates…
Novel monolithically integrated bidirectional GaN HEMT
/forschung/publikationen/novel-monolithically-integrated-bidirectional-gan-hemt
Lateral chip architecture of GaN power semiconductors enables design of a monolithically integrated GaN HEMT featuring bidirectional blocking capability. The proposed bidirectional GaN HEMT allows…
Sub-picosecond pulsed THz FET detector characterization in plasmonic detection regime based on autocorrelation technique
/forschung/publikationen/sub-picosecond-pulsed-thz-fet-detector-characterization-in-plasmonic-detection-regime-based-on-autocorrelation-technique
Many THz applications require detection of sub-picosecond THz pulses. Electronic detectors, in particular, can address this challenge. We report on the detection of sub-picosecond THz pulses…
Efficient coupling of heat-flow and electro-optical models for simulation of dynamics in high-power broad-area semiconductor lasers
/forschung/publikationen/efficient-coupling-of-heat-flow-and-electro-optical-models-for-simulation-of-dynamics-in-high-power-broad-area-semiconductor-lasers
The aim of the work presented here is an efficient coupling of a heat flow (HF) model defined on multiple vertical-lateral subdomains and a dynamic electro-optical (EO) model acting in the…
AlGaN multi-quantum barriers for electron blocking in group III-nitride devices
/forschung/publikationen/algan-multi-quantum-barriers-for-electron-blocking-in-group-iii-nitride-devices
In this paper we investigate the enhancement of electron blocking in AlGaN multi-quantum barriers (MQBs). Simulations of effective barrier height of Al0.2Ga0.8N/GaN-MQBs were performed in order to…