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Forward Development of kW-class Diode Laser Bars
/forschung/publikationen/forward-development-of-kw-class-diode-laser-bars
Forward Development of kW-class Diode Laser Bars S.G. Strohmaier1, G. Erbert1,3, T. Rataj1, A.H. Meissner-Schenk1, V. Loyo-Maldonado1, C. Carstens1, H. Zimer2,…
Progress in high duty cycle, highly efficient fiber coupled 940-nm pump modules for high-energy class solid state lasers
/forschung/publikationen/progress-in-high-duty-cycle-highly-efficient-fiber-coupled-940-nm-pump-modules-for-high-energy-class-solid-state-lasers
Progress in high duty cycle, highly efficient fiber coupled 940-nm pump modules for high-energy class solid state lasers R. Platz, C. Frevert, B. Eppich, J. Rieprich,…
Intensity noise properties of compact laser device based on miniaturized MOPA system for spectroscopic applications
/forschung/publikationen/intensity-noise-properties-of-compact-laser-device-based-on-miniaturized-mopa-system-for-spectroscopic-applications
Intensity noise properties of compact laser device based on miniaturized MOPA system for spectroscopic applications S. Baumgärtner1, S. Juhl1, D. Opalevs1, A. Sahm2,…
Shifted Excitation Raman Difference Spectroscopy - From Diode Lasers to in-situ Applications
/forschung/publikationen/shifted-excitation-raman-difference-spectroscopy-from-diode-lasers-to-in-situ-applications
Shifted Excitation Raman Difference Spectroscopy - From Diode Lasers to in-situ Applications M. Maiwald, B. Sumpf Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik,…
Degradation effects of the active region in UV-C light-emitting diodes
/forschung/publikationen/degradation-effects-of-the-active-region-in-uv-c-light-emitting-diodes
An extensive analysis of the degradation characteristics of AlGaN-based ultraviolet light-emitting diodes emitting around 265 nm is presented. The optical power of LEDs stressed at a constant dc…
Advanced in-situ control for III-nitride RF power device epitaxy
/forschung/publikationen/advanced-in-situ-control-for-iii-nitride-rf-power-device-epitaxy
An extensive analysis of the degradation characteristics of AlGaN-based ultraviolet light-emitting diodes emitting around 265 nm is presented. The optical power of LEDs stressed at a constant dc…
Repetition rate control of optical self-injected passively mode-locked quantum-well lasers: experiment and simulation
/forschung/publikationen/repetition-rate-control-of-optical-self-injected-passively-mode-locked-quantum-well-lasers-experiment-and-simulation
The pulse repetition rate (RR) tuning and locking range (LR) as well as the pulse train timing stability of passively mode-locked quantum-well (QW) semiconductor lasers (SCLs) subject to…
Chip-carrier thermal barrier and its impact on lateral thermal lens profile and beam parameter product in high power broad area lasers
/forschung/publikationen/chip-carrier-thermal-barrier-and-its-impact-on-lateral-thermal-lens-profile-and-beam-parameter-product-in-high-power-broad-area-lasers
High power broad area diode lasers with high optical power density in a small focus spot are in strong commercial demand. For this purpose, the beam quality, quantified via the beam parameter product…
Impact of open-core threading dislocations on the performance of AlGaN metal-semiconductor-metal photodetectors
/forschung/publikationen/impact-of-open-core-threading-dislocations-on-the-performance-of-algan-metal-semiconductor-metal-photodetector
The influence of open-core threading dislocations on the bias-dependent external quantum efficiency (EQE) of bottom-illuminated Al0.5Ga0.5N/AlN metal-semiconductor-metal (MSM) photodetectors (PDs) is…
AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/ sapphire
/forschung/publikationen/algan-based-deep-uv-leds-grown-on-sputtered-and-high-temperature-annealed-aln-sapphire
The performance characteristics of AlGaN-based deep ultraviolet light emitting diodes (UV-LEDs) grown by metalorganic vapor phase epitaxy on sputtered and high temperature annealed AlN/sapphire…