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Influence of waveguide strain and surface morphology on AlGaN-based deep UV laser characteristics
/forschung/publikationen/influence-of-waveguide-strain-and-surface-morphology-on-algan-based-deep-uv-laser-characteristics
The waveguide strain and the surface morphologies of AlGaN-based laser heterostructures emitting in the deep UV spectral range have been investigated. In particular, the impact of the AlGaN…
Shifted excitation resonance Raman difference spectroscopy system suitable for the quantitative in vivo detection of carotenoids in human skin
/forschung/publikationen/shifted-excitation-resonance-raman-difference-spectroscopy-system-suitable-for-the-quantitative-in-vivo-detection-of-carotenoids-in-human-skin
A system for shifted excitation resonance Raman spectroscopy (SERRDS) suitable for the application in medical practice for the in vivo detection of carotenoids in human skin is presented. This system…
Near Infrared Diode Laser THz Systems
/forschung/publikationen/near-infrared-diode-laser-thz-systems
The generation and detection of radiation in the THz frequency range can be achieved with many different electronic and photonic concepts. Among the many different photonic THz systems the most…
Investigation of red-emitting distributed Bragg reflector lasers by means of numerical simulations
/forschung/publikationen/investigation-of-red-emitting-distributed-bragg-reflector-lasers-by-means-of-numerical-simulations
The authors report theoretical and experimental results on the properties of distributed Bragg reflector semiconductor lasers. Using the traveling wave equation model, they show that a proper choice…
Efficient iron doping of HVPE GaN
/forschung/publikationen/efficient-iron-doping-of-hvpe-gan
Thick freestanding iron-doped semi-insulating GaN layers were grown by Hydride Vapor Phase Epitaxy on GaN/sapphire templates. Iron doping was achieved by using Fe57-enriched Fe2O3 reduced to…
Bow Reduction of AlInGaN-Based Deep UV LED Wafers Using Focused Laser Patterning
/forschung/publikationen/bow-reduction-of-alingan-based-deep-uv-led-wafers-using-focused-laser-patterning
We investigated the effect of bow reduction of AlInGaN-based deep-ultraviolet light-emitting diode (DUV LED) wafers using internally focused laser patterning. The laser-induced stress inside of the…
Widely tunable high power sampled-grating MOPA system emitting around 970 nm
/forschung/publikationen/widely-tunable-high-power-sampled-grating-mopa-system-emitting-around-970nbspnm
A high power widely tunable master oscillator power amplifier (MOPA) laser system will be presented, emitting between 962.0 nm - 985.5 nm, with an output power in the watt range.
Reliable 2 W DBR-tapered diode lasers lasing at 1180 nm based on highly strained quantum wells
/forschung/publikationen/reliable-2-w-dbr-tapered-diode-lasers-lasing-at-1180-nm-based-on-highly-strained-quantum-wells
Distributed Bragg reflector tapered diode lasers at 1180 nm were developed based on strained InGaAs quantum wells. The lasers feature a lifetime of more than 2000 h at 2.0 W and are…
High pulse power wavelength stabilized laser diodes for automotive LiDAR
/forschung/publikationen/high-pulse-power-wavelength-stabilized-laser-diodes-for-automotive-lidar
The development of diode lasers for automotive LiDAR systems is presented. The lasers feature an internal Bragg grating for low wavelength shift with temperature and small spectral width and emit…
Influence of quantum well barrier height on series resistance in GaAs-based broad area diode lasers
/forschung/publikationen/influence-of-quantum-well-barrier-height-on-series-resistance-in-gaas-based-broad-area-diode-lasers
High efficiency GaAs-based lasers must have low resistance. However, resistance diverges as temperature reduces, for symmetric and asymmetric vertical structures, at diverse wavelengths, contrary to…