ICNS 12

Das FBH ist auf der International Conference on Nitride Semiconductors mit  einem eingeladenen Vortrag vertreten: Review of vertical GaN-based FETs
weitere Vorträge:

• Enhanced efficiencies from UVB light emitting diodes with transparent p-AlGaN superlattices (TUB, FBH)
• Degradation effects in AlGaN-based UVC light-emitting diodes (FBH, TUB)
• AlN seed layers from atomic layer deposition on sapphire for MOVPE growth of AlN (FBH, SENTECH)
• MOVPE growth of AlN on thermally roughened sapphire (FBH)
  
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