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Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)
/forschung/publikationen/surface-preparation-and-patterning-by-nano-imprint-lithography-for-the-selective-area-growth-of-gaas-nanowires-on-si111
The selective area growth of Ga-assisted GaAs nanowires (NWs) with a high vertical yield on Si(111) substrates is still challenging. Here, we explore different surface preparations and their impact…
Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate
/forschung/publikationen/chip-design-for-thin-film-deep-ultraviolet-leds-fabricated-by-laser-lift-off-of-the-sapphire-substrate
We report on a chip design which allows the laser lift-off (LLO) of the sapphire substrate sustaining the epitaxial film of flip-chip mounted deep ultraviolet light emitting diodes. A nanosecond…
Extended 9.7 nm tuning range in a MOPA system with a tunable dual grating Y-branch laser
/forschung/publikationen/extended-97nm-tuning-range-in-a-mopa-system-with-a-tunable-dual-grating-y-branch-laser
In this Letter, we present a tunable Y-branch hybrid master oscillator power amplifier (MOPA) with 5.5 W output power, emitting between 973.7 and 983.4 nm. The MO is a monolithic Y-branch…
Efficient, High Brightness 1030 nm DBR Tapered Diode Lasers With Optimized Lateral Layout
/forschung/publikationen/efficient-high-brightness-1030-nm-dbr-tapered-diode-lasers-with-optimized-lateral-layout
Efficient, high brightness 1030 nm distributed Bragg reflector (DBR) tapered diode lasers with optimized lateral waveguide and grating designs are presented in this paper. The layout changes…
High-quality AlN grown on a thermally decomposed sapphire surface
/forschung/publikationen/high-quality-aln-grown-on-a-thermally-decomposed-sapphire-surface
In this study we show how to realize a self-assembled nano-patterned sapphire surface on 2 inch diameter epi-ready wafer and the subsequent AlN overgrowth both in the same metal-organic vapor…
Reduction of Optical Feedback Originating From Ferroelectric Domains of Periodically Poled Crystals
/forschung/publikationen/reduction-of-optical-feedback-originating-from-ferroelectric-domains-of-periodically-poled-crystals
Optical feedback originating from the interfaces of the periodically poled domains of a nonlinear crystal is usually blocked by a bulky optical isolator to avoid an influence on the pump source.…
Efficient 600-W-Laser Bars for Long-Pulse Pump Applications at 940 and 975 nm
/forschung/publikationen/efficient-600-w-laser-bars-for-long-pulse-pump-applications-at-940-and-975nbspnm
We report the first demonstration of 1.2 J-emission into long pulses (≥2 ms) from passively cooled laser bars. These efficient high-fill-factor bars were developed for long-pulse pumping…
Triangular-shaped sapphire patterning for HVPE grown AlGaN layers
/forschung/publikationen/triangular-shaped-sapphire-patterning-for-hvpe-grown-algan-layers
AlGaN growth by hydride vapor phase epitaxy on patterned sapphire substrates has been investigated. Growth on honeycomb-shaped holes is disturbed by parasitic growth of c-plane oriented AlGaN…
Influence of AlN buffer layer on growth of AlGaN by HVPE
/forschung/publikationen/influence-of-aln-buffer-layer-on-growth-of-algan-by-hvpe
To the end of improvement of layer morphology and crystalline perfection of thick AlGaN layers grown by hydride vapor phase epitaxy (HVPE) as well as for the suppression of crystallite formation…
Avoidance of instable photoluminescence intensity from AlGaN bulk layers
/forschung/publikationen/avoidance-of-instable-photoluminescence-intensity-from-algan-bulk-layers
The emission intensity from c-plane AlGaN bulk layers changes strongly on time scales from seconds to hours during above band gap illumination in photoluminescence experiments. Responsible for this…