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Wideband Dynamic Drain Current Measurements with a Galvanically Isolated Probe Targeting Supply-Modulated RF Power Amplifiers for 5G Infrastructure
/forschung/publikationen/wideband-dynamic-drain-current-measurements-with-a-galvanically-isolated-probe-targeting-supply-modulated-rf-power-amplifiers-for-5g-infrastructure
Supply modulation of RF power amplifiers (PA) is a powerful efficiency enhancement technique. For optimization of the RF PA and the supply modulator the dynamic low frequency drain current is of high…
Effect of the GaN:Mg Contact Layer on the Light-Output and Current-Voltage Characteristic of UVB LEDs
/forschung/publikationen/effect-of-the-ganmg-contact-layer-on-the-light-output-and-current-voltage-characteristic-of-uvb-leds
In order to realize UVB LEDs with high wall-plug efficiencies, the light extraction efficiency from the LED heterostructure must be maximized and operating voltages reduced. In this study, we…
GaN-Based Vertical n-Channel MISFETs on Free Standing Ammonothermal GaN Substrates
/forschung/publikationen/gan-based-vertical-n-channel-misfets-on-free-standing-ammonothermal-gan-substrates
In this work, a vertical n-channel MISFET homoepitaxially grown on ammonothermal n-type GaN substrates by MOVPE is demonstrated. The MIS gate module consists of plasma enhanced atomic layer…
Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power
/forschung/publikationen/spectral-linewidth-vs-front-facet-reflectivity-of-780nbspnm-dfb-diode-lasers-at-high-optical-output-power
The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and…
Future technology trends
/forschung/publikationen/future-technology-trends
Future technology trends L. Lorenz1, T. Erlbacher2, O. Hilt3 Keywords: Silicon carbide transistors; Gallium nitride transistors; Power devices; WBG semiconductor technology;…
Reduction of absorption losses in MOVPE-grown AlGaAs Bragg mirrors
/forschung/publikationen/reduction-of-absorption-losses-in-movpe-grown-algaas-bragg-mirrors
Residual p-type doping from carbon has been identified as the root cause of excess absorption losses in (Al)GaAs/ AlGaAs Bragg mirrors for high-finesse optical cavities when grown by metalorganic…
Local 2DEG Density Control in Heterostructures of Piezoelectric Materials and Its Application in GaN HEMT Fabrication Technology
/forschung/publikationen/local-2deg-density-control-in-heterostructures-of-piezoelectric-materials-and-its-application-in-gan-hemt-fabrication-technology
This paper investigates the local control of two dimensional electron gas (2DEG) density in AlGaN/GaN heterostructures by applying external mechanical stress. The proposed 2DEG tuning mechanism…
Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ∼ 0.53 THz
/forschung/publikationen/transferred-substrate-inpgaassb-heterojunction-bipolar-transistor-technology-with-fmaxnbspsimnbsp053nbspthz
We report on the realization of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-µm-wide…
Gate Control Scheme of Monolithically Integrated Normally OFF Bidirectional 600-V GaN HFETs
/forschung/publikationen/gate-control-scheme-of-monolithically-integrated-normally-off-bidirectional-600-v-gan-hfets
The design and gate-control management of monolithically integrated bidirectional normally OFF GaN-HFET-based switches are presented. Unidirectional 600-V p-GaN-gate HFETs are converted into…
Degradation behavior of AlGaN-based 233nm deep-ultraviolet light emitting diodes
/forschung/publikationen/degradation-behavior-of-algan-based-233nm-deep-ultraviolet-light-emitting-diodes
The degradation behavior of AlGaN multiple-quantum well (MQW) deep-ultraviolet light emitting diodes emitting near 233 nm stressed at a constant current of 100 mA over 1000 h of…