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1030 nm DBR tapered diode laser with up to 16 W of optical output power
/forschung/publikationen/1030-nm-dbr-tapered-diode-laser-with-up-to-16-w-of-optical-output-power
A 1030 nm distributed Bragg reflector (DBR) tapered diode laser with optimized vertical layer structure and lateral design is presented. At a heatsink temperature of 15°C the developed laser provides…
Defect generation in deep-UV AlGaN-based LEDs investigated by electrical and spectroscopic characterisation
/forschung/publikationen/defect-generation-in-deep-uv-algan-based-leds-investigated-by-electrical-and-spectroscopic-characterisation
AlGaN-based UV-B LEDs are promising candidates to replace conventional ultraviolet sources, thanks to their low operation voltage and to the possibility of tuning the emission wavelength by changing…
In-situ metrology in multiwafer reactors during MOVPE of AIN-based UV-LEDs
/forschung/publikationen/in-situ-metrology-in-multiwafer-reactors-during-movpe-of-ain-based-uv-leds
UV-LEDs are of great interest for applications like disinfection, gas sensing, and phototherapy. The cost sensitive LEDs are commonly grown by MOVPE on transparent AlN/sapphire templates. The large…
Miniaturized Lab System for Future Cold Atom Experiments in Microgravity
/forschung/publikationen/miniaturized-lab-system-for-future-cold-atom-experiments-in-microgravity
We present the technical realization of a compact system for performing experiments with cold 87Rb and 39K atoms in microgravity in the future. The whole system fits into a capsule to be used in the…
Monolithically wavelength-stabilized high power diode lasers
/forschung/publikationen/monolithically-wavelength-stabilized-high-power-diode-lasers
GaAs-based diode lasers that deliver high powers at high efficiencies within a narrow, stable spectral window are in strong demand for applications including solid state laser pumping and direct…
Growth and optical properties of GaN-based non- and semipolar LEDs
/forschung/publikationen/growth-and-optical-properties-of-gan-based-non-and-semipolar-leds
The development of smooth (0001) GaN films on c-plane sapphire [1] and the activation of p-dopants in GaN [2] led very quickly to the realization of high brightness InGaN LEDs on c-plane sapphire…
Establishing Traceability for On-Wafer S-Parameter Measurements of Membrane Technology Devices up to 110 GHz
/forschung/publikationen/establishing-traceability-for-on-wafer-s-parameter-measurements-of-membrane-technology-devices-up-to-110-ghz
In this paper we report on progress towards establishing traceability for fully calibrated on-wafer measurements of planar devices built in membrane technology. For the first time, we present a…
Narrow linewidth micro-integrated high power diode laser module for deployment in space
/forschung/publikationen/narrow-linewidth-micro-integrated-high-power-diode-laser-module-for-deployment-in-space
Semiconductor laser technology has shown to be a promising alternative to other laser technologies, e.g. solid state lasers, for employment in coherent satellite communication and fundamental physics…
Si impurity concentration in nominally undoped Al0.7Ga0.3N grown in a planetary MOVPE reactor
/forschung/publikationen/si-impurity-concentration-in-nominally-undoped-al07ga03n-grown-in-a-planetary-movpe-reactor
The unintentional silicon incorporation during the metalorganic vapor phase epitaxy (MOVPE) of nominally undoped Al0.7Ga0.3N in a Planetary Reactor under various growth conditions was investigated.…
Analysis of strain and composition distributions in laterally strain-modulated InGaAs nanostructures after overgrowth with GaAs or InGaP
/forschung/publikationen/analysis-of-strain-and-composition-distributions-in-laterally-strain-modulated-ingaas-nanostructures-after-overgrowth-with-gaas-or-ingap
Analysis of strain and composition distributions in laterally strain-modulated InGaAs nanostructures after overgrowth with GaAs or InGaP U. Zeimer, H. Kirmse1, J. Grenzer2,…