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A 95 GHz Bandwidth 12 dBm Output Power Distributed Amplifier in InP-DHBT Technology for Optoelectronic Applications
/forschung/publikationen/a-95-ghz-bandwidth-12-dbm-output-power-distributed-amplifier-in-inp-dhbt-technology-for-optoelectronic-applications
This paper presents a DC-95 GHz distributed amplifier (DA) based on an InP/GaAsSb/InP 800 nm DHBT technology. The circuit employs five cascode unit cells with…
Influence of template properties and quantum well number on stimulated emission from Al0.7Ga0.3N/Al0.8Ga0.2N quantum wells
/forschung/publikationen/influence-of-template-properties-and-quantum-well-number-on-stimulated-emission-from-al07ga03nal08ga02n-quantum-wells
AlGaN multiple quantum well laser heterostructures for emission around 240 nm have been grown by metalorganic vapor phase epitaxy on epitaxially laterally overgrown (ELO) AlN/sapphire templates.…
Ultrafast carrier dynamics in a GaN/Al0.18Ga0.82N superlattice
/forschung/publikationen/ultrafast-carrier-dynamics-in-a-ganal018ga082n-superlattice
Relaxation processes of photoexcited carriers in a GaN/Al0.18Ga0.82N superlattice are studied in femtosecond spectrally resolved reflectivity measurements at ambient temperature. The transient…
Red-emitting distributed-feedback ridge-waveguide laser based on high-order surface grating
/forschung/publikationen/red-emitting-distributed-feedback-ridge-waveguide-laser-based-on-high-order-surface-grating
Distributed-feedback ridge-waveguide lasers emitting around 670 nm have been fabricated and experimentally characterised. Wavelength stabilisation is provided by 40th Bragg order surface…
Wavelength-Stabilized High-Pulse-Power Laser Diodes for Automotive LiDAR
/forschung/publikationen/wavelength-stabilized-high-pulse-power-laser-diodes-for-automotive-lidar
For automotive light detection and ranging (LiDAR) systems diode lasers emitting short optical pulses with a good beam quality and a low wavelength shift over a wide operating temperature range is…
Diameter evolution of selective area grown Ga-assisted GaAs nanowires
/forschung/publikationen/diameter-evolution-of-selective-area-grown-ga-assisted-gaas-nanowires
Tapering of vapour-liquid-solid (VLS) grown nanowires (NWs) is a widespread phenomenon resulting from dynamics of the liquid droplet during growth and direct vapour-solid (VS) growth on the sidewall.…
Asynchronous sampling terahertz time-domain spectroscopy using semiconductor lasers
/forschung/publikationen/asynchronous-sampling-terahertz-time-domain-spectroscopy-using-semiconductor-lasers
Asynchronous optical sampling terahertz time-domain spectroscopy using semiconductor laser-based ultra-short pulse sources is demonstrated. A pair of hybridly mode-locked edge-emitting external…
Lifetime behavior of laser diodes with highly strained InGaAs QWs and emission wavelength between 1120 nm and 1180 nm
/forschung/publikationen/lifetime-behavior-of-laser-diodes-with-highly-strained-ingaas-qws-and-emission-wavelength-between-1120nbspnm-and-1180nbspnm
Highly strained InxGa1-xAs QWs are commonly used for laser diodes in the wavelength range beyond 1100 nm, but they suffer from strain induced formation of defects. The effect of different laser…
Picosecond Pulse Generation and Pulse Train Stability of A Monolithic Passively Mode-Locked Semiconductor Quantum-Well Laser at 1070 nm
/forschung/publikationen/picosecond-pulse-generation-and-pulse-train-stability-of-a-monolithic-passively-mode-locked-semiconductor-quantum-well-laser-at-1070-nm
We experimentally study the pulse generation and the pulse train timing and amplitude stability of a monolithic passively mode-locked multisection quantum-well semiconductor laser. The laser emits a…
Superconductive coupling in tailored [(SnSe)1+δ]m(NbSe2)1 multilayers
/forschung/publikationen/superconductive-coupling-in-tailored-snse1-deltamnbse21-multilayers
Ferecrystals are a new artificially layered material system, in which the individual layers are stacked with monolayer precision and are turbostratically disordered. Here, the superconducting…