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Multi-Octave bandwidth, 100 W GaN power amplifier using planar transmission line transformer
/forschung/publikationen/multi-octave-bandwidth-100-w-gan-power-amplifier-using-planar-transmission-line-transformer
In this paper, design, implementation, and experimental results of efficient, high-power, and multi-octave gallium nitride-high electron mobility transistor power amplifier are presented. To overcome…
10.5 W central lobe output power obtained with an efficient 1030 nm DBR tapered diode laser
/forschung/publikationen/105-w-central-lobe-output-power-obtained-with-an-efficient-1030-nm-dbr-tapered-diode-laser
An efficient, 1030 nm distributed Bragg reflector (DBR) tapered diode laser with 10.5 W central lobe output power is presented. The laser is based on a tapered DBR grating for enhanced…
High power diode lasers converted to the visible
/forschung/publikationen/high-power-diode-lasers-converted-to-the-visible
High power diode lasers have in recent years become available in many wavelength regions. However, some spectral regions are not well covered. In particular, the visible spectral range is lacking…
Coherent beam combining of high-power tapered amplifiers
/forschung/publikationen/coherent-beam-combining-of-high-power-tapered-amplifiers
We describe the coherent beam combining of three high-power tapered laser amplifiers seeded by a DFB laser at λ = 976 nm, and demonstrate a combined power of 12.9 W in a…
Generation of optical picosecond pulses with monolithic colliding-pulse mode-locked lasers containing a chirped double-quantum-well active region
/forschung/publikationen/generation-of-optical-picosecond-pulses-with-monolithic-colliding-pulse-mode-locked-lasers-containing-a-chirped-double-quantum-well-active-region
In this study, the authors present experimental results on 6 mm long monolithic passively colliding-pulse mode-locked (CPM) lasers. The AlGaAs-based devices with InxGa1-xAsyP1-y…
Yellow laser emission at 578 nm by frequency doubling with diode lasers of high radiance at 1156 nm
/forschung/publikationen/yellow-laser-emission-at-578-nm-by-frequency-doubling-with-diode-lasers-of-high-radiance-at-1156-nm
For the first time, we demonstrate diode lasers consisting of a single quantum-well, which emit at 1156 nm. Ridge waveguide lasers and tapered lasers of this structure contain a monolithically…
Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs
/forschung/publikationen/metamorphic-al05ga05nsi-on-alnsapphire-for-the-growth-of-uvb-leds
In this paper we investigate the growth of metamorphic Al0.5Ga0.5N:Si on c-plane AlN/sapphire. The structural properties of the AlGaN:Si pseudo substrates and the electro-optical characteristics of…
Electro-optical characteristics of 808nm ridge-waveguide lasers operated with high-current nanosecond pulses
/forschung/publikationen/electro-optical-characteristics-of-808nm-ridge-waveguide-lasers-operated-with-high-current-nanosecond-pulses
The aim of this paper is to present detailed experimental and theoretical investigations of the behavior of ridge-waveguide (RW) lasers emitting at 808 nm under injection of 3 ns long…
Numerical study of high-power semiconductor lasers for operation at subzero temperatures
/forschung/publikationen/numerical-study-of-high-power-semiconductor-lasers-for-operation-at-subzero-temperatures
We present results on the impact of the Al-content in the waveguide structure on the electrooptical characteristics of 9xx nm, GaAs-based high-power lasers operated at room (300 K) and at sub-zero…
Optically Pumped DFB Lasers Based on GaN Using 10th-Order Laterally Coupled Surface Gratings
/forschung/publikationen/optically-pumped-dfb-lasers-based-on-gan-using-10th-order-laterally-coupled-surface-gratings
An optically pumped GaN-based laser structure with 10th-order laterally coupled surface grating is demonstrated. The fabrication involved i-line photolithography and dry etching, avoiding more…