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Comparison of Ti/Pt/Au and Ti/Ru/Au contact systems to p-type InGaP
/forschung/publikationen/comparison-of-tiptau-and-tiruau-contact-systems-to-p-type-ingap
The electrical and metallurgical properties of vacuum-evaporated Ti/Pt/Au and Ti/Ru/Au contacts to moderately doped p-type InGaP (p ∼ 3 × 1018 cm−3) and their therma
Structure and stability studies on W, WSi, WSiN/GaAs systems by XRD
/forschung/publikationen/structure-and-stability-studies-on-w-wsi-wsingaas-systems-by-xrd
The microstructural properties of tungsten, tungsten silicide and tungsten silicide nitride layers on GaAs were studied by thin film x-ray diffraction and correlated with deposition parameters, target
Low resistance (~1x10-6 cm-2) Au/Ge/Pd ohmic contact to n-Al0.5In0.5P
/forschung/publikationen/low-resistance-1x10-6-cm-2-augepd-ohmic-contact-to-n-al05in05p
A Au (1000 Å)/Ge (100 Å)/Pd (100 Å) contact scheme has been investigated to form low resistance Ohmic contact to n-Al0.5In0.5P (E g =2.3 eV) with a minimum contact resistivity of about
Modelling of edges and corners in the alternating transmission line matrix (ATLM) scheme
/forschung/publikationen/modelling-of-edges-and-corners-in-the-alternating-transmission-line-matrix-atlm-scheme
An improved scattering matrix for modelling edge and corner nodes with the alternating transmission line matrix (ATLM) method is presented. ATLM simulations with new edge and corner nodes show much gr
Optimum Mesh Grading for Finite-Difference Method
/forschung/publikationen/optimum-mesh-grading-for-finite-difference-method
The coarseness error of the finite-difference (FD) method is studied analyzing a typical planar waveguide and a rectangular coaxial geometry. Results for equidistant and graded mesh are compared in te
Three-Dimensional Full-Vector Analysis of Optical Waveguides by Finite-Integration Beam-Propagation Method (FIBPM)
/forschung/publikationen/three-dimensional-full-vector-analysis-of-optical-waveguides-by-finite-integration-beam-propagation-method-fibpm
In the paper a novel finite-integration beam-propagation method (FIBPM) is presented. This method is especially suited for the simulation of optical waveguides containing extremely thin layers of comp
A coplanar 38-GHz SiGe MMIC oscillator
/forschung/publikationen/a-coplanar-38-ghz-sige-mmic-oscillator
Design, technology, and first results of a coplanar Si-SiGe HBT oscillator monolithically integrated on high-resistivity silicon are reported. At 38 GHz, an oscillator output power of 2 dBm with a con
High-impedance coplanar waveguides with low attenuation
/forschung/publikationen/high-impedance-coplanar-waveguides-with-low-attenuation
The conventional MMIC coplanar line covers an impedance range from about 30-80 Ω. Values outside this range cannot be fabricated reliably or cause excessive losses, For several applications, however,
Simple method for examining sulphur passivation of facets in InGaAs–AlGaAs (λ=0.98µm) laser diodes
/forschung/publikationen/simple-method-for-examining-sulphur-passivation-of-facets-in-ingaas-algaas-l098um-laser-diodes
The effect of (NH4)2Sx treatment of the facet of InGaAs/AlGaAs ridge waveguide (RW) laser diodes on the nonradiative current and catastrophic optical damage (COD) level is reported. Using the power–vo
Stability of sulfur-passivated facets of InGaAs-AlGaAs laser diodes
/forschung/publikationen/stability-of-sulfur-passivated-facets-of-ingaas-algaas-laser-diodes
The facets of GaAs-AlGaAs ridge waveguide (RW) laser diodes were passivated using (NH4)2Sz. The effectiveness of this procedure was checked by electroluminescence power-voltage-current (P-V-Z) measure