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QUICK3 - Design of a Satellite-Based Quantum Light Source for Quantum Communication and Extended Physical Theory Tests in Space
/forschung/publikationen/quick3-design-of-a-satellite-based-quantum-light-source-for-quantum-communication-and-extended-physical-theory-tests-in-space
Modern quantum technologies have matured such that they can now be used in space applications, e.g., long-distance quantum communication. Here, the design of a compact true single photon source is pre
Determining GaN HEMT Trap Models from MHz Load-line Measurement — A Case Study
/forschung/publikationen/determining-gan-hemt-trap-models-from-mhz-load-line-measurement-a-case-study
GaN HEMTs are known to suffer from trapping effects that lead to a reduction in current density depending on previously applied drain voltages. Characterization of the effect currently requires expens
Micro-integrated diode laser modules for operation in quantum technology applications
/forschung/publikationen/micro-integrated-diode-laser-modules-for-operation-in-quantum-technology-applications
Micro-integrated diode laser modules for operation in quantum technology applications J. Hirsch, M. Bursy, M. Gärtner, S. Gerken, N. Goossen-Schmidt, J. Hamperl, S.
High-Temperature Annealing of Si-Doped AlGaN
/forschung/publikationen/high-temperature-annealing-of-si-doped-algan
This study explores the impact of Si doping on the material properties of high-temperature annealed (HTA) Al0.71Ga0.29N layers, which are grown on AlN/sapphire templates. The AlGaN layers are doped wi
2024 MRS Spring Meeting & Exhibit
/termine/2024-mrs-spring-meeting-exhibit
Das FBH präsentiert beim 2024 MRS Spring Meeting & Exhibit aktuelle Forschungsergebnisse.
OPIC 2024
/termine/opic-2024
Das FBH präsentiert beim Optics and Photonics International Congress (OPIC) aktuelle Forschungsergebnisse.
Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy
/forschung/publikationen/selective-growth-of-gap-crystals-on-cmos-compatible-si-nanotip-wafers-by-gas-source-molecular-beam-epitaxy
Gallium phosphide (GaP) is a III−V semiconductor with remarkable optoelectronic properties, and it has almost the same lattice constant as silicon (Si). However, to date, the monolithic and large-scal
Monolithically integrated multimode interference coupler-based master oscillator power amplifier with dual-wavelength emission around 830 nm
/forschung/publikationen/monolithically-integrated-multimode-interference-coupler-based-master-oscillator-power-amplifier-with-dual-wavelength-emission-around-830-nm
A monolithically integrated dual-wavelength multimode interference coupler-based master oscillator power amplifier is presented. It consists of two shallowly etched, laterally separated ridge waveguid
iCampus-Cottbus Conference iCCC2024
/termine/icampus-cottbus-conference-iccc2024
Wir sind auf Konferenz und Messe vertreten - besuchen Sie uns am Gemeinschaftsstand des iCampus
Two-photon polymerization with a 780 nm monolithic diode laser
/forschung/publikationen/two-photon-polymerization-with-a-780-nm-monolithic-diode-laser
Two-photon polymerization with a 780 nm monolithic diode laser F. Behlaua, N. Surkampb, S. Wohlfeilc, A. Kniggec, M.R. Hofmannb, C. Esena, and A. Ostendorfa a