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Stable operation of InGaAs/InGaP/AlGaAs (λ = 1020 nm) laser diodes
/forschung/publikationen/stable-operation-of-ingaasingapalgaas-lambda-1020-nm-laser-diodes
The facet degradation of InGaAs/GaAs/AlGaAs ridge waveguide (RW) laser diodes was suppressed by replacing the AlGaAs waveguide layers with a InGaP lattice matched to GaAs. The long-term behaviour of s
Nonlinear modeling of SiGe HBTs up to 50 GHz
/forschung/publikationen/nonlinear-modeling-of-sige-hbts-up-to-50-ghz
A new large-signal model for SiGe heterostructure bipolar transistors (HBT’s) is presented that includes nonideal leakage currents, Kirk-effect, and thermal behavior. The parameters are extracted from
FDTD Analysis of Submillimeter-Wave CPW with Finite-Width Ground Metallization
/forschung/publikationen/fdtd-analysis-of-submillimeter-wave-cpw-with-finite-width-ground-metallization
The dispersion and attenuation characteristics of conductor-backed coplanar transmission lines with finite-width ground metallizations are studied in the frequency range up to 1 THz. The finite-d
A physics-based model of hyperabrupt varactors for nonlinear transmission line applications
/forschung/publikationen/a-physics-based-model-of-hyperabrupt-varactors-for-nonlinear-transmission-line-applications
This article presents a physics-based varactor-diode model for exponentially graded doping profiles. The capacitance–voltage characteristic and the bias dependence of the series resistance are discuss
Low-dispersion thin-film microstrip lines with cyclotene (benzocyclobutene) as dielectric medium
/forschung/publikationen/low-dispersion-thin-film-microstrip-lines-with-cyclotene-benzocyclobutene-as-dielectric-medium
We report on thin-film microstrip lines (TFMSLs) fabricated on low-resistivity Si with polymerized cyclotene as the dielectric between signal and ground conductor, all on top of the wafer. Electro-opt
Entanglement dynamics of photon pairs and quantum memories in the gravitational field of the earth
/forschung/publikationen/entanglement-dynamics-of-photon-pairs-and-quantum-memories-in-the-gravitational-field-of-the-earth
We investigate the effect of entanglement dynamics due to gravity – the basis of a mechanism of universal decoherence – for photonic states and quantum memories in Mach-Zehnder and Hong-Ou-Mandel inte
Correlating Interface and Border Traps With Distinctive Features of C–V Curves in Vertical Al2O3/GaN MOS Capacitors
/forschung/publikationen/correlating-interface-and-border-traps-with-distinctive-features-of-c-v-curves-in-vertical-al2o3gan-mos-capacitors
In this article, we present an analysis of the correlation between interface traps (ITs) and border traps (BTs) on distinctive features of C–V curves in vertical Al2O3/gallium-nitride (GaN) MOS capaci
Advanced in-situ etch depth control for dry etching processes – to achieve optimum device perfor-mance
/forschung/forschungsnews/advanced-in-situ-etch-depth-control-for-dry-etching-processes-to-achieve-optimum-device-perfor-mance
Sophisticated etch processes are required to fabricate high-power diode lasers with excellent performance. We explain exemplarily how to control the etch depth in-situ and why the measuring wavelength
Process optimisation of MOVPE growth by numerical modelling of transport phenomena including thermal radiation
/forschung/publikationen/process-optimisation-of-movpe-growth-by-numerical-modelling-of-transport-phenomena-including-thermal-radiation
A global transport model for the MOVPE of III–V growth based on the finite volume solution of coupled flow, heat and mass transfer, including detailed radiative transfer, multicomponent diffusion and
The effective frequency method in the analysis of vertical-cavity surface-emitting lasers
/forschung/publikationen/the-effective-frequency-method-in-the-analysis-of-vertical-cavity-surface-emitting-lasers
An effective index model for vertical-cavity surface-emitting lasers (VCSEL's) is reexamined. In a systematic manner, the basic equations are derived. Instead of effective indices of plane reference w