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Guest Editorial Special Issue on Globalization in Photonics
/forschung/publikationen/guest-editorial-special-issue-on-globalization-in-photonics
We highlight in this special issue some of the excellent work and advances in photonics which are taking place world-wide. The papers also emphasize how the photonics field in general and the engineer
apc|m conference
/termine/22nd-european-advanced-process-control-and-manufacturing-conference-2024
22. European Advanced Process Control and Manufacturing (apc|m) Conference
Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers
/forschung/publikationen/properties-and-fabrication-of-high-order-bragg-gratings-for-wavelength-stabilization-of-diode-lasers
We report further progress in the design and fabrication of high-order Bragg gratings defined by I-line projection lithography that are implemented in a high-power diode laser. Simulations of surface
MOVPE growth of GaInP/GaAs hetero-bipolar-transistors using CBr4 as carbon dopant source
/forschung/publikationen/movpe-growth-of-gainpgaas-hetero-bipolar-transistors-using-cbr4-as-carbon-dopant-source
Carbon doping of GaAs with carbon tetrabromide (CBr4) in low pressure MOVPE has been investigated and applied to the fabrication of HBTs. Especially the hydrogen incorporation and the associated accep
Growth monitoring by reflectance anisotropy spectroscopy in MOVPE reactors for device fabrication
/forschung/publikationen/growth-monitoring-by-reflectance-anisotropy-spectroscopy-in-movpe-reactors-for-device-fabrication
Reflectance anisotropy spectroscopy (RAS) has proved its capability to study surface processes during metalorganic vapour phase epitaxy (MOVPE) growth of a variety of III–V compounds. However, these i
Identification of a buried single quantum well within surface structured semiconductors using depth resolved x-ray grazing incidence diffraction
/forschung/publikationen/identification-of-a-buried-single-quantum-well-within-surface-structured-semiconductors-using-depth-resolved-x-ray-grazing-incidence-diffraction
A free standing surface wire nanostructure defined on GaAs[001] containing a 5 nm thick GaInAs single quantum well (SQW) was analysed, recording reciprocal space maps by coplanar high-resolution x-ray
Influence of growth temperature and substrate orientation on the layer properties of MOVPE-grown (GaIn)(AsP)/GaAs
/forschung/publikationen/influence-of-growth-temperature-and-substrate-orientation-on-the-layer-properties-of-movpe-grown-gainaspgaas
The luminescence properties of In1−xGaxAsyP1−y layers and heterostructures grown lattice matched to GaAs by metalorganic vapour-phase epitaxy (MOVPE) were studied and correlated to the crystalline pro
Gain spectra measurement by a variable stripe length method with current injection
/forschung/publikationen/gain-spectra-measurement-by-a-variable-stripe-length-method-with-current-injection
A new method for determining gain spectra is presented. The amplified spontanous emission is measured and spectrally resolved in both TE and TM polarisations; it is dependent on the current injected
Characterization of InxGa1-xAs single quantum wells, buried in GaAs[001], by grazing incidence diffraction
/forschung/publikationen/characterization-of-inxga1-xas-single-quantum-wells-buried-in-gaas9100193-by-grazing-incidence-diffraction
The depth profile of the chemical composition in InxGa1-xAs single quantum wells (SQWs), epitaxially grown onto a GaAs[001] substrate and covered by a GaAs cap layer, has been determined by us
Evaluation of strained InGaAs/GaAs quantum wells by atomic force microscopy
/forschung/publikationen/evaluation-of-strained-ingaasgaas-quantum-wells-by-atomic-force-microscopy
Atomic force microscopy (AFM) is adopted for evaluation of strained InGaAs/GaAs quantum well structures grown by metalorganic vapor phase epitaxy. InAs-rich clusters are formed at the upper interface