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Behavior of the Fermi-edge singularity in the photoluminescence spectra of a high-density two-dimensional electron gas

H. Kissel , U. Zeimer, A. Maaßdorf, and M. Weyers
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, D-12489 Berlin, Germany

Published in:

Phys. Rev. B, vol. 65 no. 23, pp. 235320 (2002).

Abstract:

Physical Review B, Vol. 65 (2002).
© 2002 The American Physical Society. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the American Physical Society.

R. Heitz, and D. Bimberg
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, D-10623 Berlin, Germany

Fundamentally different behavior of the Fermi-edge singularity (FES) in photoluminescence of heavily doped pseudomorphic modulation-doped AlxGa1-x/InyGa1-y/GaAs heterostructures is observed. The noteworthy features are: (i) the FES enhancement from EF of n=1 electronic subband is observed under condition of the n=2 subband population, (ii) the heavy-hole localization energy is directly observed in the FES development, (iii) the magnitude of the FES increases with increasing temperature at low temperatures, and (iv) the FES is a nonmonotonic function of the excitation density. A qualitative analysis is performed in terms of heavy-hole localization by potential fluctuations in the InyGa1-yAs quantum well.

Institut für Physik, Humboldt-Universität zu Berlin, Invalidenstr. 110, D-10115 Berlin, Germany

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