1. Ferdinand-Braun-Institut
  2. Forschung
  3. Publikationen
  4. GaAs HBT Operating as Integrat ...

Publikationen

Konferenzbeiträge - bei Terminen
Eine Reihe von Hochformatbroschüren ist aufrecht angeordnet. Die Cover zeigen Titel und Informationen zu verschiedenen Themen.

Dissertationen
Collage aus mehreren Patentschriften aus verschiedenen Ländern, darunter Deutschland, die USA und Japan. Es werden Informationen wie Aktenzeichen, Anmeldedaten und Patentnummern präsentiert.

Patente

GaAs HBT Operating as Integrated V-to W-Band Gunn Oscillator

M. Rudolph, R. Doerner, P. Heymann

Published in:

IEEE MTT-S Int. Microwave Symp. Dig., vol. 3, pp. 1737-1740 (2002).

Abstract:

Experimental results on GaAs HBT oscillators are presented exploiting the Gunn effect in the collector region. The HBTs are operated beyond fmax as MMIC-compatible two-port transferred-electron devices (TEDs) oscillating at millimeter-wave frequencies. The oscillation frequency of a single device can be tuned in the range of 40-80 GHz, mainly depending on collector voltage. Maximum output power is 0.3 mW at 62 GHz. Phase noise can be considerably improved by subharmonic injection achieving values of -90 dBc/Hz @ 100 kHz.

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany

© Copyright 2002 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Full version in pdf-format.