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Publikationen
/forschung/publikationen/dbr-lasers-emitting-at-1060nbspnm-with-first-order-grating-in-ingap-waveguide-layer
Publikationen
/forschung/publikationen/patterned-growth-algaas-using-metalorganic-vapor-phase-epitaxy
High-power diode lasers with small vertical beam divergence emitting at 808 nm
/forschung/publikationen/high-power-diode-lasers-with-small-vertical-beam-divergence-emitting-at-808nbspnm
A new waveguiding scheme for high-power diode lasers based on high-index quarter-wave reflecting layers inserted into the cladding layers is presented. For 808 nm lasers, a small vertical far-field…
Beam Quality of High-Power 800 nm Broad-Area Laser Diodes with 1 µm- and 2 µm Large Optical Cavity Structures
/forschung/publikationen/beam-quality-of-high-power-800-nm-broad-area-laser-diodes-with-1um-and-2um-large-optical-cavity-structures
The beam quality of 880 nm AlGaAs/GaAsP broad-area (BA) laser diodes with large optical cavity (LOC) waveguide structures was studied under high power conditions The LOC structures consist of a…
Defect recognition via longitudinal mode analysis of high power fundamental mode and broad area edge emitting laser diodes
/forschung/publikationen/defect-recognition-via-longitudinal-mode-analysis-of-high-power-fundamental-mode-and-broad-area-edge-emitting-laser-diodes
A nondestructive method is presented which allows a precise detection of defects and their positions inside the cavity of semiconductor lasers. The defect recognition is based on the measurement of…
Modeling of Low-Frequency Noise in GaInP/GaAs Hetero-Bipolar Transistors
/forschung/publikationen/modeling-of-low-frequency-noise-in-gainpgaas-hetero-bipolar-transistors
Accurate low-frequency noise modeling is a prerequisite for oscillator phase-noise simulation. In this paper, the LF noise sources of GaInP/GaAs HBTs are investigated. It turns out that the 1/f-noise…
On the Gunn Effect in GaAs HBTs
/forschung/publikationen/on-the-gunn-effect-in-gaas-hbts
A negative RF-resistance effect in GaAs HBTs is described. It results from the nonlinear velocity-field characteristic in GaAs, takes place in the bulk collector, and leads to |S22|…
Multiharmonic Generators for Relative Phase Calibration of Nonlinear Network Analyzers
/forschung/publikationen/multiharmonic-generators-for-relative-phase-calibration-of-nonlinear-network-analyzers
Multiharmonic generators are of interest for determining coupler phase dispersion of nonlinear network analyzers inherently dealing with nonsinusoidal waveforms for RF current-voltage (I-V)…
Theory and Measurements of Flip-Chip interconnects for frequencies up to 100 GHz
/forschung/publikationen/theory-and-measurements-of-flip-chip-interconnects-for-frequencies-up-to-100-ghz
A detailed investigation of flip-chip interconnects up to W-band frequencies is presented in this paper. In a coplanar 50-Ohm-environment, different test structures were fabricated and measured to…
Publikationen
/forschung/publikationen/staircase-like-spectral-dependence-of-ground-state-luminescence-time-constants-in-high-density-inasgaas-quantum-dots