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Modeling of Low-Frequency Noise in GaInP/GaAs Hetero-Bipolar Transistors

P. Heymann, M. Rudolph, R. Doerner, F. Lenk

Published in:

IEEE MTT-S Int. Microwave Symp. Dig., vol. 3, pp. 1967-1970 (2001).

Abstract:

Accurate low-frequency noise modeling is a prerequisite for oscillator phase-noise simulation. In this paper, the LF noise sources of GaInP/GaAs HBTs are investigated. It turns out that the 1/f-noise model must contain two sources, the base-emitter diode and the emitter resistance. Quantitatively, excess noise power at 100 kHz scales with the square of collector current-density.

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany

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