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Influence of current spreading on the transparency current density of quantum-well lasers
/forschung/publikationen/influence-of-current-spreading-on-the-transparency-current-density-of-quantum-well-lasers
We investigate the dependence of the threshold current of broad-area lasers on the stripe width. A comparison of differently deep-etched devices fabricated from the same wafer reveals that the stripe…
Optimization of GaAsP-QWs for High Power Diode Lasers at 800 nm
/forschung/publikationen/optimization-of-gaasp-qws-for-high-power-diode-lasers-at-800-nm
Tensile strained GaAsP quantum wells (QWs) embedded in AlGaAs waveguide and cladding layers are an alternative approach for the wavelength range 700-800 nm. We will present a detailed experimental…
Al-free 950nm BA diode lasers with high efficiency and reliability at 50°C ambient temperature
/forschung/publikationen/al-free-950nm-ba-diode-lasers-with-high-efficiency-and-reliability-at-50c-ambient-temperature
We report device properties and results of lifetime tests for Al-free InGaAs/InGaAsP/InGaP broad-area (BA) laser diodes, emitting at 950 nm. The epitaxial layers were grown by metal organic…
Effect of band gap renormalization on threshold current and efficiency of a distributed Bragg reflector laser
/forschung/publikationen/effect-of-band-gap-renormalization-on-threshold-current-and-efficiency-of-a-distributed-bragg-reflector-laser
The threshold current and the external efficiency of a three-section distributed Bragg reflector laser are investigated as a function of a forward electrical bias applied to the passive sections.…
Comparison of binary and ternary growth over trenches using MOVPE
/forschung/publikationen/comparison-of-binary-and-ternary-growth-over-trenches-using-movpe
The MOVPE growth of Al0.3Ga0.7As over trenches is compared to the growth of its binary components GaAs and AlAs. The growth rates for GaAs, AlAs and AlGaAs on planar (100),(311)A and (311)B…
180mW DBR lasers with first-order grating in GaAs emitting at 1062nm
/forschung/publikationen/180-mw-dbr-lasers-with-first-order-gratings-in-gaas-emitting-at-1062-nm
Distributed Bragg reflector (DBR) lasers emitting at 1062nm using a first-order grating fabricated by holographic lithography in a GaAs waveguide layer have been realised for the first time. At room…
Publikationen
/forschung/publikationen/diode-lasers-with-al-free-quantum-wells-embedded-in-loc-algaas-waveguides-between-715-nm-and-840-nm