Beam Quality of High-Power 800 nm Broad-Area Laser Diodes with 1 µm- and 2 µm Large Optical Cavity Structures
R. Hülsewede, J. Sebastian, H. Wenzel, G. Beister, A. Knauer, G. Erbert
Published in:
Opt. Commun., vol. 192, no. 1-2, pp. 69-75 (2001).
Abstract:
The beam quality of 880 nm AlGaAs/GaAsP broad-area (BA) laser diodes with large optical cavity (LOC) waveguide structures was studied under high power conditions The LOC structures consist of a tensile-strained GaAsP single quantum well embedded in AlGaAs layers forming 1 and 2 µm thick waveguide cores. A low beam divergence of 51° respectively 46° (full width at 1/e2 maximum) is obtained in fast axis direction. BA diode lasers with 2 mm cavity length and stripe widths of 60, 100, and 200 µm show beam quality factors M 2 along the slow axis of about 12, 16 and 35 at 2 W output power, respectively. M 2 also weakly depends upon the waveguide width and is slightly smaller for the 2 µm waveguide core if the stripe width is less than 100 µm.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany
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