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Publikationen

/forschung/publikationen/interdiffusion-induced-degradation-of-1017-nm-ridge-waveguide-laser-diodes

Publikationen

/forschung/publikationen/aupttipt-base-contacts-to-n-ingapp-gaas-for-self-passivating-hbt-ledge-structures

Publikationen

/forschung/publikationen/scalable-gainpgaas-hbt-large-signal-model-1

SiGe MMICs beyond 20 GHz on a Commercial Technology

/forschung/publikationen/sige-mmics-beyond-20-ghz-on-a-commercial-technology

A comparison of 22 and 25 GHz MMIC SiGe-HBT oscillators on high- and low-resistivity silicon employing the commercial TEMIC process is presented. An output power of 11 dBm at 22 GHz,…

Publikationen

/forschung/publikationen/improved-parameter-extraction-of-small-sized-fets-for-low-power-applications

Dispersion and Radiation Characteristics of Conductor-Backed CPW with Finite Ground Width

/forschung/publikationen/dispersion-and-radiation-characteristics-of-conductor-backed-cpw-with-finite-ground-width

Dispersion and radiation properties of the conductor-backed CPW are studied. A frequency-domain finite-difference method using the PML absorbing boundary condition is used. The different types of…

Optimized Flip-Chip Interconnect for 38 GHz Thin-Film Microstrip Multichip Modules

/forschung/publikationen/optimized-flip-chip-interconnect-for-38-ghz-thin-film-microstrip-multichip-modules

Flip-chip interconnects with 80 µm bumps are optimized for 38 GHz by means of elektromagnetic simulation. Thin-film microstrip is used as transmission-line on the carrier substrate. A…

The Perfectly Matched Layer as Lateral Boundary in Finite-Difference Transmission-Line Analysis

/forschung/publikationen/the-perfectly-matched-layer-as-lateral-boundary-in-finite-difference-transmission-line-analysis-1

Using PML as lateral boundary in waveguide analysis introduces artificial modes and other unexpected effects. The paper presents results of a finite-difference frequency-domain approach, verfied for…

Publikationen

/forschung/publikationen/harmonic-tuning-of-power-transistors-by-active-load-pull-measurement

Direct extraction of FET noise models from noise figure measurements

/forschung/publikationen/direct-extraction-of-fet-noise-models-from-noise-figure-measurements

An algorithm is presented that allows for noniterative extraction of the parameters of the Pucel and Pospieszalski FET noise models directly from noise-figure measurements. Since the goal is to…