B. Sumpf^a, P. Adamiec^b, M. Zorn^c, H. Wenzel^a, G. Erbert^a, G. Tränkle^a

Published in:

Proc. SPIE, vol. 7953, no. 79530Z (2011).

Abstract:

Highly efficient 670 nm-tapered lasers with a vertical divergence of 31° (FWHM) will be presented. The devices are based on a GaInP single quantum well embedded in AlGaInP waveguide layers. Compared to previously reported material, the structure has an improved material quality with a transparency current density j_tr = 165 A/cm², an internal efficiency η_i = 0.75, small internal losses ai = 1.2 cm^-1, and a good temperature stability with T₀ = 120 K. 2 mm long tapered lasers were fabricated in a standard process, using reactive ion etching for the index-guided structures and ion implantation for the definition of the contact window in the tapered section. The properties of devices with 500 µm or 750 µm long ridge waveguide (RW) section and a flared section with 3° or 4° taper angle will be compared. In CW-operation an output power up to P = 1 W with a conversion efficiency of 30% and a beam propagation ratio M² (2^nd moments) smaller than 2.3 were obtained. In pulsed mode up to 3.3 W output power was measured.

Keywords:

Semiconductor lasers, Tapered lasers, Red-emitting lasers, High-Brightness.

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