Suche
Regeln für die Suche
- Nur Wörter mit 2 oder mehr Zeichen werden akzeptiert
- Maximal 200 Zeichen insgesamt
- Leerzeichen werden zur Trennung von Worten verwendet, "" kann für die Suche nach ganzen Zeichenfolgen benutzt werden (keine Indexsuche)
- UND, ODER und NICHT sind Suchoperatoren, die den standardmäßigen Operator überschreiben. +/|/- entspricht UND, ODER und NICHT als Operatoren
- Alle Suchwörter werden zu Kleinschreibung konvertiert
Enhancement of channel conductivity in AlGaN/GaN heterostructure field effect transistors by AlGaN:Si back barrier
/forschung/publikationen/enhancement-of-channel-conductivity-in-algangan-heterostructure-field-effect-transistors-by-algansi-back-barrier
Heterostructure field effect transistors with three AlGaN/GaN interfaces were designed and investigated. A Si-doped AlGaN back barrier was used to compensate for the reduction of channel conductivity…
Electrical and EDX-analysis of CF4 and Ar plasma treated AlGaN/GaN HEMTs
/forschung/publikationen/electrical-and-edx-analysis-of-cf4-and-ar-plasma-treated-algangan-hemts
In this paper we have investigated the effect of CF4 plasma treatment on AlGaN/GaN HEMTs and compared it with Ar plasma treated devices. We have investigated the electrical characteristics of the…
High peak-power nanosecond pulses generated with DFB RW laser
/forschung/publikationen/high-peak-power-nanosecond-pulses-generated-with-dfb-rw-laser
The generation of optical pulses with very high-peak power by gainswitching of a distributed-feedback (DFB) ridge-waveguide (RW) laser emitting at a wavelength of 1064 nm is demonstrated. With…
Strong charge carrier localization interacting with extensive nonradiative recombination in heteroepitaxially grown m-plane GaInN quantum wells
/forschung/publikationen/strong-charge-carrier-localization-interacting-with-extensive-nonradiative-recombination-in-heteroepitaxially-grown-m-plane-gainn-quantum-wells
The development of GaInN quantum well structures with nonpolar crystal orientation for light-emitting diodes and semiconductor lasers is currently one of the main foci of III-nitride-based…
Influence of minority carrier lifetime on photoresponse characteristics of visible-blind Al0.25Ga0.75N MSM photodetectors
/forschung/publikationen/influence-of-minority-carrier-lifetime-on-photoresponse-characteristics-of-visible-blind-al025ga075n-msm-photodetectors
We report on numerical simulations of photoresponse characteristics of visible-blind Al0.25Ga0.75NN metalsemiconductor- metal (MSM) photodetectors. Good agreement with experimental data is obtained…
Advances in group III-nitride-based deep UV light-emitting diode technology
/forschung/publikationen/advances-in-group-iii-nitride-based-deep-uv-light-emitting-diode-technology
The field of AlGaInN ultraviolet UV light-emitting diodes (LEDs) is reviewed, with a summary of the state-of-the-art in device performance and enumeration of applications. Performance-limiting…
Application of GaN-based ultraviolet-C light emitting diodes - UV LEDs - for water disinfection
/forschung/publikationen/application-of-gan-based-ultraviolet-c-light-emitting-diodes-uv-leds-for-water-disinfection
GaN-based ultraviolet-C (UV-C) light emitting diodes (LEDs) are of great interest for water disinfection. They offer significant advantages compared to conventional mercury lamps due to their compact…
Surface morphology of homoepitaxial GaN grown on non- and semipolar GaN substrates
/forschung/publikationen/surface-morphology-of-homoepitaxial-gan-grown-on-non-and-semipolar-gan-substrates
GaN layers on bulk m-plane, (1122), (1012) and (1011) GaN substrates were grown by metal organic vapor phase epitaxy. XRD rocking curves have a FWHM of less than 150", indicating excellent…
Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells
/forschung/publikationen/impact-of-band-structure-and-transition-matrix-elements-on-polarization-properties-of-the-photoluminescence-of-semipolar-and-nonpolar-ingan-quantum-wells
Partial or full linear polarization is characteristic for the spontaneous emission of light from semipolar and nonpolar InGaN quantum wells. This property is an implication of the crystalline…
Theoretical and experimental analysis of the lateral modes of high-power broad-area lasers
/forschung/publikationen/theoretical-and-experimental-analysis-of-the-lateral-modes-of-high-power-broad-area-lasers
For maximum fiber-coupled power, broad-area (BA) diode lasers must operate with small lateral far field angles. However, these structures are laterally multi-moded, with low beam quality and wide…