High-power low-divergence 1060 nm photonic crystal laser diodes based on quantum dots
K. Posilovic1, V.P. Kalosha1, M. Winterfeldt1, J.-H. Schulze1, D. Quandt1, T.D. Germann1, A. Strittmatter1, D. Bimberg1, J. Pohl2 and M. Weyers2
Published in:
Electron. Lett., vol. 48, no.22, pp. 1419-1420 (2012).
Abstract:
GaAs-based photonic band crystal diode lasers with low vertical divergence and high output power have been designed and realised with a quantum dot active area at a wavelength of 1060 nm. Broad area lasers with 100 µm stripe width show low transparency current densities of 129 Acm-2 and high differential efficiency of 70 %. Devices of 1 mm length deliver up to 17.7 W pulsed output power and 2.6 W continuous-wave output power is demonstrated for 2 mm-long devices. The maximum output power is presently limited by catastrophic degradation in the pulsed case and by thermal rollover in the continuous-wave case. The full width half maximum vertical divergence of the fundamental mode of the devices is reduced to 13°, being nearly independent of driving current.
1 Institut für Festkörperphysik, Technische Universität Berlin, EW5-2, Hardenbergstraße 36, Berlin 10623, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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