Indium incorporation efficiency and critical layer thickness of (2021) InGaN layers on GaN
S. Ploch1, T. Wernicke1, M. Frentrup1, M. Pristovsek1, M. Weyers2, and M. Kneissl1,2
Published in:
Appl. Phys. Lett., vol. 101, no. 202102 (2012).
Abstract:
In this study, the indium incorporation efficiency and critical layer thickness for misfit dislocation formation of thick (2021) oriented InGaN layers were investigated. InGaN layers with an indium content between 1.7% and 16% were grown by metalorganic vapor phase epitaxy. A reduced In-incorporation efficiency was found in comparison to (0001) oriented layers at 725 °C. At lower growth temperature, the difference in incorporation efficiency between the two orientations is reduced. All (2021) InGaN layers, strained and relaxed with an In-content up to 12%, exhibit smooth surface morphologies with a rms roughness below 1 nm. In contrast to (0001) InGaN, hardly any strain is reduced by 3D-growth. The critical layer thickness for misfit dislocation formation of InGaN (2021) exhibits a behavior as predicted by the Matthews and Blakeslee model [J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974)]. Deviations, however, indicate that modifications of the formula are needed.
1 Technische Universität Berlin, Institute of Solid State Physics, Hardenbergstrasse 36, D-10623 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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