Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors
P. Marko1, A. Alexewicz1, O. Hilt2, G. Meneghesso3, E. Zanoni3, J. Würfl2, G. Strasser1, and D. Pogany1
Published in:
Appl. Phys. Lett., vol. 100, no. 1435072 (2012).
Abstract:
Random telegraph signal (RTS) fluctuations with relative amplitude up to 50% are observed in forward and reverse gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistors. Measurements of RTS amplitude and mean pulse widths as a function of forward gate bias indicate that the RTS is due to modulation of current along an intrinsic or stress-induced percolation path across the AlGaN-barrier by electron capture and emission on a trap within the barrier. Processes of electron capture from GaN to trap and subsequent tunneling to metal gate or electron exchange between GaN channel and the trap are considered.
1 Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7, 1040 Vienna, Austria
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
3 Department of Information Engineering, University of Padova, via Gradenigo 6/A, 35131 Padova, Italy
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