All-semiconductor based, narrow linewidth, high power laser system for laser communication applications in space at 1060nm
S. Spießbergera, M. Schiemangkb, A. Sahma, F. Buggea, J. Frickea, H. Wenzela, A. Wichta, G. Erberta, and G. Tränklea
Published in:
Proc. SPIE, vol. 8246, no. 82460I (2012).
Abstract:
We demonstrate environmental test results of a compact high-power master oscillator (MO) power amplifier (PA) laser module emitting near 1064 nm. The module is micro-integrated on a footprint of 50 × 10mm2, features an output power of 1 W, an intrinsic linewidth of 3.6 kHz, and a FWHM linewidth of 100 kHz. Results of lifetime tests and vibrational tests will be presented.
Furthermore, we introduce tuning characteristics of a distributed Bragg reflector laser that can be used as a master oscillator. 2 nm of fast tuneability is realized by placing on-chip heaters close to the Bragg grating.
a Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
b Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
Keywords:
narrow linewidth, master oscillator power amplifier (MOPA), distributed Bragg reflector (DBR) laser, semiconductor laser, coherent optical communication, coherence.
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