ICNS-15

Das FBH präsentiert bei der 15. International Conference on Nitride Semiconductors neueste Forschungsergebnisse in zahlreichen Beiträgen.

• Impact of Dislocation Networks on Leakage Currents of GaN-on-GaN pn-Diodes: A Statistical Approach Comparing X-Ray Topography with Electrical Characteristics
• Temperature depencence of charge carrier diffusion in GaN and AIGaN layers
• Precise determination of the charge carrier concentration in linearly graded AIGaN distributed polarization doped layers and the effect on the performance of 233 nm light emitting diodes
• Impact of quantum well number on the quantum efficiency in 233 nm Aluminium Gallium Nitride light emitting diodes: a simulation study
• GaN-based violet laser diodes utilizing (In)GaN underlayers
• Analysis of the surface morphology of epitaxial grown AIN and AIGaN on AIN bulk substrates with high off-cut angles up to 0.5o
• 265 hm optically pumped lasers on high temperature annealed AIN/sapphire: hillocks and miscut
• In-situ control during growth and processing of GaN-based vertical power devices using optical metrology
• Strain engineering of SiNx layers for pinch-off voltage modulation of GaN high electron mobility transistors
• Effect of thickness and composition gradient in the polarization doping layer of 226 nm far-UVC light emitting diodes

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