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An Integrated Atmospheric Microwave Plasma Source
/forschung/publikationen/an-integrated-atmospheric-microwave-plasma-source
Atmospheric plasma processes become more and more popular in recent times. A new integrated atmospheric plasma source is presented which consists of a microwave resonator combined with a solid-state…
Tapered lasers emitting at 650 nm with 1 W output power with nearly diffraction-limited beam quality
/forschung/publikationen/tapered-lasers-emitting-at-650nbspnm-with-1nbspw-output-power-with-nearly-diffraction-limited-beam-quality
High-brightness tapered lasers emitting around 650 nm were developed. Devices 2 mm long with a 200-µm-long straight section, 1800-µm-long tapered section, and 4° taper angle reached…
Influence of Dynamic Access Resistances on the Linearity of Large GaN HEMT Powerbars
/forschung/publikationen/influence-of-dynamic-access-resistances-on-the-linearity-of-large-gan-hemt-powerbars
This paper presents a study of the dynamic access resistance related nonlinearity of GaN HEMT devices with very large periphery. The bias-dependent access resistance is deembeded to the chip…
Maximum output power of broad-area laser diodes
/forschung/publikationen/maximum-output-power-of-broad-area-laser-diodes
The causes for the saturation of both the continuous-wave and the pulsed output power of broad-area laser diodes driven at very high currents are investigated experimentally and theoretically. The…
AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode
/forschung/publikationen/algangan-hemt-with-integrated-recessed-schottky-drain-protection-diode
We present an AlGaN/GaN high-electron mobility transistor (HEMT) with an integrated recessed protection diode on the drain side of the transistor channel. Results from our Schottky-drain HEMT…
Punch-through voltage enhancement scaling of AlGaN/GaN HEMTs using AlGaN double heterojunction confinement
/forschung/publikationen/punch-through-voltage-enhancement-scaling-of-algangan-hemts-using-algan-double-heterojunction-confinement
In this paper we present an enhancement of punch-through voltage in AlGaN/GaN high electron mobility transistor devices by increasing the electron confinement in the transistor channel using an AlGaN…
Engineered linearity of GaN-based HEMTs power devices by tailoring transfer characteristics
/forschung/publikationen/engineered-linearity-of-gan-based-hemts-power-devices-by-tailoring-transfer-characteristics
This paper presents an innovative method of increasing inherent linearity of GaN/AlGaN HEMT by tailoring the effective transconductance. The effective transconductance of the whole device is tailored…
InP DHBT Process in Transferred-Substrate Technology With ft and fmax Over 400 GHz
/forschung/publikationen/inp-dhbt-process-in-transferred-substrate-technology-with-ft-and-fmax-over-400nbspghz
In this paper, a double heterojunction bipolar transistor (DHBT) process has been developed in transferred-substrate (TS) technology to optimize high-frequency performance. It provides an aligned…
Traveling-Wave Amplifiers in Transferred Substrate InP-HBT Technology
/forschung/publikationen/traveling-wave-amplifiers-in-transferred-substrate-inp-hbt-technology
Promising transistor results of an InP transferred substrate (TS) technology are presented. ft and fmax are reported as high as 420 and 450 GHz, respectively. Processing has been developed to a…
Compositional dependence of the bowing parameter for highly strained InGaAs/GaAs quantum wells
/forschung/publikationen/compositional-dependence-of-the-bowing-parameter-for-highly-strained-ingaasgaas-quantum-wells
Highly strained InGaAs/GaAs quantum wells (QWs) are studied using the complementary spectroscopic and high-resolution x-ray diffraction (HRXRD) techniques. It is found that the QW features can be…