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11W broad area 976 nm DFB lasers with 58% power conversion efficiency
/forschung/publikationen/11w-broad-area-976nbspnm-dfb-lasers-with-58-power-conversion-efficiency
A report is presented on how distributed feedback (DFB) lasers can achieve high optical power and power conversion efficiency together with a narrow vertical emission angle. Recently developed…
Pulse-shape improvement during amplification and second-harmonic generation of picosecond pulses at 531 nm
/forschung/publikationen/pulse-shape-improvement-during-amplification-and-second-harmonic-generation-of-picosecond-pulses-at-531nbspnm
We study second-harmonic generation of picosecond pulses in bulk periodically poled lithium niobate using an all-semiconductor master oscillator-power amplifier with gain-switched seed as our…
(In)AlGaN deep ultraviolet light emitting diodes with optimized quantum well width
/forschung/publikationen/inalgan-deep-ultraviolet-light-emitting-diodes-with-optimized-quantum-well-width
The effect of the quantum well (QW) width on the light output and efficiency of ultraviolet (UV) light emitting diodes (LEDs) has been investigated. The carrier injection in the devices is simulated…
Application of Diode-Laser Raman Spectroscopy for In situ Investigation of Meat Spoilage
/forschung/publikationen/application-of-diode-laser-raman-spectroscopy-for-in-situ-investigation-of-meat-spoilage
Raman spectroscopy is well suited for noninvasive and non-destructive analysis. The spectra provide detailed information about the composition of the matter like a fingerprint on molecular level.…
Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm
/forschung/publikationen/tunable-high-power-narrow-spectrum-external-cavity-diode-laser-based-on-tapered-amplifier-at-668nbspnm
A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to…
Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates
/forschung/publikationen/laser-scribing-for-facet-fabrication-of-ingan-mqw-diode-lasers-on-sapphire-substrates
In this letter, a novel method for the fabrication of high-quality facets for III-nitride lasers grown on c-plane sapphire substrates as well as on GaN substrates is presented. Based on a laser…
InGaN-GaN Disk Laser for Blue-Violet Emission Wavelengths
/forschung/publikationen/ingan-gan-disk-laser-for-blue-violet-emission-wavelengths
An optically pumped InGaN-GaN surface-emitting laser with external cavity emitting at 393 nm has been realized. The peak output power is 300W, the slope efficiency 3.5%, and the threshold pump…
Determination of GaN HEMT reliability by monitoring IDSS
/forschung/publikationen/determination-of-gan-hemt-reliability-by-monitoring-idss
In this paper, we investigate the importance and necessity to determine the reliability of GaN HEMT devices by monitoring IDSS during accelerated DC life-test measurements at elevated ambient…
Optical and Structural Properties of In0.08GaN/In0.02GaN Multiple Quantum Wells Grown at Different Temperatures and with Different Indium Supplies
/forschung/publikationen/optical-and-structural-properties-of-in008ganin002gan-multiple-quantum-wells-grown-at-different-temperatures-and-with-different-indium-supplies
The optical and structural properties of In0.08Ga0.92N/In0.02Ga0.98N multiple quantum wells (MQWs) grown at different temperatures and with different supplies of indium were analyzed by atomic force…
One-Watt level mid-IR output, singly resonant, continuous-wave optical parametric oscillator pumped by a monolithic diode laser
/forschung/publikationen/one-watt-level-mid-ir-output-singly-resonant-continuous-wave-optical-parametric-oscillator-pumped-by-a-monolithic-diode-laser
We report more than 1.1 Watt of idler power at 3373 nm in a singly resonant optical parametric oscillator (SRO), directly pumped by a single-frequency monolithic tapered diode laser. The…